Abstract:A detailed numerical study on Ge and Si ultrathin-body (UTB) p-type double-gate MOSFET (pDG-FET) is carried out with the help of in-house developed non-equilibrium Green's function (NEGF) simulator employing the six-band k·p model. Six typical confinement/transport crystal orientation configurations and three recent technology nodes are taken into account for better evaluation of device performance. The ballistic velocity and effective mass (m <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) are investigated and compared in detail between 3nm-thick Ge and Si films, with a better understanding of crystal orientation effect obtained. Device performance metrics, such as the ballistic ON-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) and subthreshold swing (SS), are also extracted and compared. With the source-to-drain tunneling (SDT) effect characterized, further numerical analysis indicates that Ge device suffers from more terrible SDT than Si device at all the considered channel lengths. As the physics behind is clarified, some expectations and suggestions for improving device performance, especially for Ge case, are addressed in the end.

Effect of Interface Roughness on the Carrier Transport in Germanium Mosfets Investigated by Monte Carlo Method

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Carrier Effective Mobilities in Germanium MOSFET Inversion Layer Investigated by Monte Carlo Simulation

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate MOSFETs

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Comparative Investigation into the Interface Passivation of Ge N- and P-Mosfets with Various 2D Materials

Investigation of the Carrier Velocity in Short Channel Ge MOSFET with NiGe Metal Source/Drain

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

Universality of electron mobility in Ge MOSFETs investigated by Monte Carlo simulation

Evaluations of Scaling Properties for Ge on Insulator Mosfets in Nano-Scale

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Influence of Interface Roughness on Electrical Properties of Pmosfets with a Si/Si1- Xgex Channel

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

MOS Interface Engineering for High-Mobility Ge CMOS

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets