Abstract:A comprehensive quantum transport study of ultrathin-body silicon double-gate pMOSFETs with gate length <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {14}$ </tex-math></inline-formula>, 10, and 7 nm is performed by in-house developed nonequilibrium Green’s function solver employing the six-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Hamiltonian. The effects of channel length, body thickness, as well as confinement and transport crystal orientations are studied systematically. Both <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> characteristics are analyzed in this paper. Furthermore, the CMOS performance benchmarking results, such as switching delay, energy consumption, and their product, are calculated with the influence of parasitic resistances and capacitances treated in an appropriate way. It is found that the crystal orientation effect on drive current is significant at both long and short channel lengths, while its effect on effective capacitance is more observable at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm. The drive current at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {14}$ </tex-math></inline-formula> nm and <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm can be well explained by average ballistic hole velocity and source-to-drain tunneling ratio, respectively. Meanwhile, the effective capacitance is not only determined by the density of states but also affected by the distribution of holes in the confined direction. Both intrinsic and extrinsic performance assessments suggest that (001)/[100] and (110)/[001] are the optimal confinement/transport crystal orientation configurations at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {7}$ </tex-math></inline-formula> nm, while <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110}{)}/[\overline {1}\textsf {10}]$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110})/[\overline {1}\textsf {11}]$ </tex-math></inline-formula> are the best choices at longer gate lengths. As <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}$ </tex-math></inline-formula> shrinks, both intrinsic and extrinsic performances will be better at a scaled body thickness.

Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p- and n-MOSFETs

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Quantum Transport Study of Si Ultrathin-Body Double-Gate Pmosfets: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Characterization of Ultrathin-Body Germanium-on-insulator (geoi) Structures and MOSFETs on Flipped Smart-Cut™ GeOI Substrates

Mobility Improvement Of Ultrathin-Body Germanium-On-Insulator (Geoi) Mosfets On Flipped Smart-Cut (Tm) Geoi Substrates

Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations

Coulomb Scattering Induced Mobility Degradation in Ultrathin-body SOI MOSFETs with High-K Gate Stack

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Demonstration of Ultra-Thin Buried Oxide Germanium-on-insulator MOSFETs by Direct Wafer Bonding and Polishing Techniques

Investigations on the Physical Understanding of Mobility in MOSFETs - from Drift-Diffusion to Quasi-Ballistic

Mos Interface And Channel Engineering For High-Mobility Ge/Iii-V Cmos