Abstract:A comprehensive numerical model of electron mobility of nanoscale symmetric, asymmetric DG MOSFETs, and independent Double-Gate (DG) MOSFETs is studied in this paper. Physically derived expressions for electron mobility, including phonon and surface roughness scattering, two most important scattering mechanisms in DG MOSFETs around room temperature, are presented, based on a numerical analytic solution to potential and carrier distribution in DG MOSFETs from accumulation to strong inversion region. A careful description of electron mobility dependence on structure parameters, temperature and effective vertical field is performed and analyzed. Simulation results indicate that for symmetric devices in dependent mode, oxide thickness only slightly affects mobility and increasing temperature monotonically decreases mobility while mobility dependence on silicon film can be complicated, strongly moderated by "volume inversion" and geometric restriction. Study also shows that for asymmetric devices in dependent mode, thicker oxide leads to higher mobility. Symmetric DG MOSFETs biased in independent mode show that mobility is controlled by both electron density induced by one gate and mobility in this set of electrons. The presented model leads to a more clear understanding on DG MOSFETs device physics and provides useful results to modeling development for circuit simulation.

Investigations on the Physical Understanding of Mobility in MOSFETs - from Drift-Diffusion to Quasi-Ballistic

Low-Field Mobility and Carrier Transport Mechanism Transition in Nanoscale Mosfets

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

Quantum-mechanical Study on the Electron Effective Mobility of Surrounding-Gate Nmosfets

Investigation of scattering mechanisms for scaled mosfets

Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p- and n-MOSFETs

Study on Electron Mobility in Nanoscale DG MOSFETs with Symmetric, Asymmetric and Independent Operation Modes

Evaluation Of Quasi-Ballistic Transport In Nano-Mosfets By Deterministic Solver Of The Time Dependent Multi-Subbands Boltzmann Transport Equation

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

2D Quantum Mechanical (QM) Charge Model and Its Application to Ballistic Transport of Sub-50nm Bulk Silicon MOSFETs

Physically Based Evaluation of Electron Mobility in Ultrathin-Body Double-Gate Junctionless Transistors

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

The Study of Electron Mobility on Ultra-scaled Silicon Nanosheet FET

Quantum Mechanical Carrier Transport and Nano-scale MOS Modeling

Analytical model of nanowire FETs in a partially ballistic or dissipative transport regime

A discussion on the universality of inversion layer mobility in MOSFET's

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling