Abstract:A comprehensive numerical model of electron mobility of nanoscale symmetric, asymmetric DG MOSFETs, and independent Double-Gate (DG) MOSFETs is studied in this paper. Physically derived expressions for electron mobility, including phonon and surface roughness scattering, two most important scattering mechanisms in DG MOSFETs around room temperature, are presented, based on a numerical analytic solution to potential and carrier distribution in DG MOSFETs from accumulation to strong inversion region. A careful description of electron mobility dependence on structure parameters, temperature and effective vertical field is performed and analyzed. Simulation results indicate that for symmetric devices in dependent mode, oxide thickness only slightly affects mobility and increasing temperature monotonically decreases mobility while mobility dependence on silicon film can be complicated, strongly moderated by "volume inversion" and geometric restriction. Study also shows that for asymmetric devices in dependent mode, thicker oxide leads to higher mobility. Symmetric DG MOSFETs biased in independent mode show that mobility is controlled by both electron density induced by one gate and mobility in this set of electrons. The presented model leads to a more clear understanding on DG MOSFETs device physics and provides useful results to modeling development for circuit simulation.

Universality of electron mobility in Ge MOSFETs investigated by Monte Carlo simulation

Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of Nmosfets with Si Nmosfets under High Normal Electric Fields

Carrier Effective Mobilities in Germanium MOSFET Inversion Layer Investigated by Monte Carlo Simulation

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

New Findings On The Scattering Mechanisms In Inversion Layers Of Ge (111), (110), And (100) Nmosfets Under High Electric Field - Differences With Si Nmosfets

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p- and n-MOSFETs

Effect of Interface Roughness on the Carrier Transport in Germanium Mosfets Investigated by Monte Carlo Method

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Evaluations of Scaling Properties for Ge on Insulator Mosfets in Nano-Scale

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate MOSFETs

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Investigation the Impact of Composition on the Performance of SiGe Nanowire Pmosfets by Different Simulation Methods

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors