Abstract:A comprehensive numerical model of electron mobility of nanoscale symmetric, asymmetric DG MOSFETs, and independent Double-Gate (DG) MOSFETs is studied in this paper. Physically derived expressions for electron mobility, including phonon and surface roughness scattering, two most important scattering mechanisms in DG MOSFETs around room temperature, are presented, based on a numerical analytic solution to potential and carrier distribution in DG MOSFETs from accumulation to strong inversion region. A careful description of electron mobility dependence on structure parameters, temperature and effective vertical field is performed and analyzed. Simulation results indicate that for symmetric devices in dependent mode, oxide thickness only slightly affects mobility and increasing temperature monotonically decreases mobility while mobility dependence on silicon film can be complicated, strongly moderated by "volume inversion" and geometric restriction. Study also shows that for asymmetric devices in dependent mode, thicker oxide leads to higher mobility. Symmetric DG MOSFETs biased in independent mode show that mobility is controlled by both electron density induced by one gate and mobility in this set of electrons. The presented model leads to a more clear understanding on DG MOSFETs device physics and provides useful results to modeling development for circuit simulation.

Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

An Analytic Model for Electron Mobility in Strained Si/Si1-xGex Nmosfets

A Universal Electron Mobility Model of Strained Si MOSFETs Based on Variational Wave Functions

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

An analytical threshold voltage model of strained surrounding-gate MOSFETs

Model of Electron Mobility in Inversion Layer of Strained Si/Si1-X Ge-X N Type Metal-Oxide-Semiconductor Field-Effect Transistors

Two-Dimensional Threshold Voltage Analytical Model of Dmg Strained-Silicon-On-Insulator Mosfets

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Low-field hole mobility model of strained Si1-xGex pMOSFET

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Monte Carlo Simulation of Electron Mobility in Strained Si Dg-Fets with Tb Bandstructure Calculation

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Analysis of through silicon via thermal stress induced device mobility variations

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

Analytical Models For The Thermal Strain And Stress Induced By Annular Through-Silicon-Via (Tsv)