Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

2D Quantum Mechanical (QM) Charge Model and Its Application to Ballistic Transport of Sub-50nm Bulk Silicon MOSFETs

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

An analytical subthreshold I-V model of SiC MOSFETs

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Quasi-2D Compact Modeling for Double-Gate MOSFET

Compact Modeling of Quantum Confinements in Nanoscale Gate-All-around MOSFETs

A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

Threshold voltage correction model for quantum short channel

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Machine Learning-Based Compact Modeling of Silicon Cold Source Field-Effect Transistors

Threshold Voltage Correction Model For Quantum Short Channel Effects In Decanano-Scaled Mosfets