Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Experimental characterization of two‐dimensional dopant profiles in silicon using chemical staining

Selected Two-Dimensional Effects in Gas Immersion Laser Doping of Unpatterned Silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Characterizations on the Doping of Single-Crystal Silicon Carbide

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

Controlling the dopant dose in silicon by mixed-monolayer doping

Nanoscale Electronics Based on Two-Dimensional Dopant Patterns in Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources

Doping silicon nanocrystals with boron and phosphorus

Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

Tracing the boron diffusion into a textured silicon solar cell by combining boron diffusion simulation with experimental and simulated scanning transmission electron beam induced current

Radiation-enhanced diffusion of impurity atoms in silicon layers

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM

Ex situ vapor phase boron doping of silicon nanowires using BBr3