Evidence of boron pairs in highly boron laser doped silicon

Léonard Desvignes,Francesca Chiodi,Géraldine Hallais,Dominique Débarre,Giacomo Priante,Feng Liao,Guilhem Pacot,Bernard Sermage

DOI: https://doi.org/10.48550/arXiv.2207.02520

2022-07-06

Abstract:Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with BCl3, followed by nanosecond laser anneal (Gas Immersion Laser Doping). The boron concentration varies thus nearly linearly with the number of process repetitions. However, it is not the case for the hole concentration which tends to saturate at high boron concentration. The difference between boron and hole concentration increases as the square of boron concentration, pointing towards the formation of boron pairs as the dominant contribution to the increase of inactive boron.

Materials Science

What problem does this paper attempt to address?

This paper aims to explore the formation mechanism of boron pairs in high - concentration boron - doped silicon materials and their influence on electrical properties. Specifically, the researchers achieved different concentrations of boron doping on silicon wafers through gas - immersion laser doping (GILD) technology, and analyzed the relationship between boron atom concentration and hole concentration through secondary ion mass spectrometry (SIMS) and Hall effect measurements. The research shows that at high boron concentrations, the hole concentration tends to saturate while the boron atom concentration continues to increase. This phenomenon indicates that as the boron concentration increases, a large number of inactive boron pairs are formed. One boron atom in these boron pairs can provide a free hole, while the other cannot, which results in the growth rate of the hole concentration being lower than that of the boron atom concentration. The paper further analyzes the mechanism of boron pair formation, pointing out that in the molten phase, the high electron density shields the Coulomb repulsion, enabling boron atoms to be randomly distributed and thus form boron pairs. This finding is of great significance for understanding the electrical properties of high - concentration boron - doped silicon.

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