Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Simulation of boron diffusion during low-temperature annealing of implanted silicon

Interstitial diffusion of ion-implanted boron in crystalline silicon

Simulation of interstitial diffusion of ion-implanted boron

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

A Monte Carlo Study of the Kickout Mechanism of Boron Diffusion in Silicon

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

The Role of Point Defects in Anomalous Diffusion of Implanted Boron in Silicon

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation