Interstitial diffusion of ion-implanted boron in crystalline silicon

O. I. Velichko,A. P. Kavaliova

DOI: https://doi.org/10.48550/arXiv.1207.0794

2012-07-03

Materials Science

Abstract:Modeling of the long-range migration of boron interstitials during low temperature annealing of ion-implanted silicon crystals has been carried out.

What problem does this paper attempt to address?

Simulation of interstitial diffusion of ion-implanted boron

O.I. Velichko,N.V. Kniazhava

DOI: https://doi.org/10.48550/arXiv.0904.3119

2009-05-02

Abstract:A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are generated continuously during annealing due to dissolution or rearrangement of the clusters of impurity atoms which are formed in the ion-implanted layers with impurity concentration above the solubility limit. The local elastic stresses arising due to the difference of boron atomic radius and atomic radius of silicon also contribute to the generation of boron interstitials. On the basis of the model proposed a simulation of redistribution of ion-implanted boron during rapid thermal annealing with duration of 60 s at a temperature of 850 degrees Celsius has been carried out. The calculated profile of boron distribution after thermal treatment agrees well with the experimental data that confirms the adequacy of the model. A number of the parameters of interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 12 nanometers. It was also obtained that approximately 1.96 % of boron atoms were converted to the interstitial sites, participated in the fast interstitial migration, and then became immobile again transferring into a substitutional position or forming the electrically inactive complexes with defects of crystal lattice.

Materials Science,Mesoscale and Nanoscale Physics
Simulation of boron diffusion during low-temperature annealing of implanted silicon

O. I. Velichko,A. P. Kavaliova

DOI: https://doi.org/10.1007/s00339-012-7378-4

2012-07-15

Abstract:Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitials

Materials Science,Mathematical Physics
Simulation of Boron Diffusion during Annealing of Silicon Substrates Undergone a High Fluence Ion Implantation

O. I. Velichko,A. A. Hundoryna

DOI: https://doi.org/10.48550/arXiv.1007.3863

2010-07-22

Abstract:A theoretical investigation of the microscopic mechanisms provided the transient enhanced diffusion of boron atoms during rapid thermal annealing of silicon substrates doped by high fluence ion implantation was carried out. To compare the mechanisms a model of the transient enhanced diffusion due to migration of the pairs "boron atom - silicon interstitial" was developed. It is supposed that during annealing dissolution of the clusters incorporated boron atoms occurs. During cluster dissolution, a fraction of boron atoms occupies a substitutional position, whereas other atoms become interstitial. It was shown from the comparison of the shape of calculated boron concentration profile after annealing with the experimental data that at a temperature of 850 Celcius degrees and below the nonequilibrium boron interstitials are responsible for the transient enhanced diffusion. On the other hand, at a temperature of 850 Celcius degrees and above a major contribution to the transient enhanced diffusion is provided by the pairs "boron atom - silicon interstitial".

Mesoscale and Nanoscale Physics
Change in the microscopic diffusion mechanisms of boron implanted into silicon with increase in the annealing temperature

O. I. Velichko,A. A. Hundorina

DOI: https://doi.org/10.48550/arXiv.1105.4270

2011-05-22

Abstract:A two stream model of boron diffusion in silicon has been developed. The model is intended for simulation of transient enhanced diffusion including redistribution of ion-implanted boron during low temperature annealing. The following mechanisms of boron diffusion were proposed, namely: the mechanism of a long-range migration of nonequilibrium boron interstitials and the mechanism due to the formation, migration, and dissolution of the "impurity atom - silicon self-interstitial" pairs. Based on the model, simulation of the redistribution of boron implanted into silicon substrates for annealing temperatures of 800 and 900 Celsius degrees was carried out. The calculated boron concentration profiles agree well with the experimental data. It was shown that for a temperature of 800 Celsius degrees the transport of impurity atoms occurred due to the long-range migration of nonequilibrium boron interstitials generated during cluster transformation or dissolution. On the other hand, it was found that at a temperature of 900 Celsius degrees the pair diffusion mechanism played a main role in the significant transient enhanced diffusion. A number of parameters describing the transport of nonequilibrium boron interstitials and transient enhanced diffusion of substitutionally dissolved boron atoms were determined. For example, it was found that at a temperature of 900 Celsius degrees the time-average enhancement of boron diffusion was approximately equal to 44 times. The results obtained are important for the development of methods of transient enhanced diffusion suppression keeping in mind the scaling of the dimensions of silicon integrated microcircuits.

Materials Science
Different shapes of impurity concentration profiles formed by long-range interstitial migration

O. I. Velichko

DOI: https://doi.org/10.48550/arXiv.1504.03351

2015-04-14

Abstract:A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is supposed that nonequilibrium boron interstitials are generated either in the course of ion implantation or at the initial stage of thermal treatment and that they migrate inward and to the surface of a semiconductor in the basic stage of annealing. It is shown that the form of the "tail" in the boron profile with the logarithmic concentration axis changes from a straight line if the average lifetime of impurity interstitials is substantially shorter than the annealing duration to that bending upwards for increasing lifetime. The calculated impurity concentration profiles are in excellent agreement with the experimental data describing the redistribution of implanted boron for low-temperature annealing at 750 Celsius degrees for 1 h and at 800 Celsius degrees for 35 min. Simultaneously, the experimental phenomenon of incomplete electrical activation of boron atoms in the "tail" region is naturally explained.

Materials Science
Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression

O. I. Velichko,A. A. Hundorina,V. V. Axenov,O.I. Velichko,A.A. Hundorina,V.V. Axenov

DOI: https://doi.org/10.48550/arXiv.1106.3423

2011-06-17

Materials Science

Abstract:It has been shown that during thermal treatments of silicon layers preamorphized by germanium implantation and then implanted with boron ions the transport of impurity atoms occurs right up to a temperature of 850^{\circ}C due to migration of the nonequilibrium boron interstitials.
A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Hart Michael J.,Evans Alan G. R.,Amaratunga Gehan A. J.,Altrip John L.

DOI: https://doi.org/10.1557/proc-92-27

1987-01-01

Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.
Interstitial diffusion of arsenic in silicon

O. I. Velichko

DOI: https://doi.org/10.48550/arXiv.1506.03314

2015-06-10

Abstract:The mechanism underlying the long-range interstitial migration of nonequilibrium impurity interstitial species is used to simulate arsenic redistribution in ion implantation. An excellent agreement of the calculated arsenic concentration profiles with experimental data allows one to assume that the migration of nonequilibrium arsenic interstitial atoms makes a significant contribution to the formation of a low concentration region on thermal arsenic diffusion. The arsenic concentration profile calculated for a temperature of 1050 Celsius degrees within the framework of this assumption agrees well with the experimental one. A number of parameters describing arsenic diffusion at 1050 and 1108 Celsius degrees have been obtained.

Materials Science
Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Hart Michael J.,Evans Alan G. R.,Amaratunga Gehan A. J.

DOI: https://doi.org/10.1557/proc-71-429

1986-01-01

Abstract:Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900–1200°C; the normal isothermal e-beam anneals, together with sub-second fast anneals and ‘dual-pulse’ anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature in less than 0.5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model. Defects remaining in diodes fabricated with the forementioned implants after these anneal cycles have been studied using DLTS techniques. Trap densities for the three types of e-beam anneal are comparable to those for furnace annealed diodes, as are the reverse leakage currents measured (typically 2–5nA for a 0.85mm2 diode at −5V).
Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

O.I. Velichko,A.M. Mironov,V.A. Tsurko,G.M. Zayats

DOI: https://doi.org/10.48550/arXiv.cond-mat/0509797

2006-11-09

Abstract:The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion implantation; arsenic; silicon PACS: <a class="link-external link-http" href="http://66.30.Jt" rel="external noopener nofollow">this http URL</a>

Materials Science
Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

W. Lerch,M. Glück,N. A. Stolwijk,H. Walk,M. Schäffer,S. D. Marcus,D. F. Downey,J. W. Chow

DOI: https://doi.org/10.1149/1.1391990

IF: 3.9

1999-07-01

Journal of The Electrochemical Society

Abstract:For the formation of ultrashallow junctions, a controlled gaseous ambient during rapid thermal annealing is indispensible. To understand the diffusion/activation mechanism, the influencing and depending variables have to be clarified precisely. Ion implantations of 1 keV boron at a fluence of Φ≈1×1015 cm−2 are annealed isothermally for 10 s at 1000, 1050, and 1100°C in an AST2800ε rapid thermal processing system under controlled concentrations of oxygen in nitrogen ambient (0–1 ppm up to 1%). The concentration‐depth profiles, measured by secondary ion mass spectroscopy, are analyzed within the framework of the kick‐out model involving diffusion enhancement via supersaturation of silicon self‐interstitials and the Fermi‐level effect. The validity of this interpretation is supported by the simulated results which are in good agreement with experimental data. Two input parameters for the SSUPREM IV simulator yield finite values of silicon self‐interstitial supersaturation as a function of temperature and oxygen concentrations, values for the boron diffusion coefficient via neutral and positively charged silicon self‐interstitials, and data for transient enhanced diffusion. After rapid thermal annealing for 10 s at 1050°C, the junctions vary within 800–1400 Å depending on the annealing ambient. © 1999 The Electrochemical Society. All rights reserved.

electrochemistry,materials science, coatings & films
A Monte Carlo Study of the Kickout Mechanism of Boron Diffusion in Silicon

MM deSouza,GAJ Amaratunga

DOI: https://doi.org/10.1063/1.361169

IF: 2.877

1996-01-01

Journal of Applied Physics

Abstract:In this article, the results of a study of the diffusion mechanism of boron in silicon based on the Monte Carlo method are presented. The kickout mechanism has been examined for the case of a delta function impurity profile under both inert and oxidation conditions. It is shown that the initial conditions play a significant role in obtaining the mean migration path lengths of the atoms. The kickout mechanism in the case of an initial delta function interstitial impurity profile has been analytically examined. The atomic level computational experiments carried out in this article validate Cowern’s results of ‘‘intermittent diffusion’’ of boron in silicon and yield, the values for λ0, the prefactor for the mean migration path length, which are found to lie between 0.024 and 0.035 nm.
Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

Shi Wanquan,Hou Qingrun,Liu Xuejun,Liu Shixiang,Fu Zhengqing,Lu Liwu,Li Yuanjing

DOI: https://doi.org/10.1088/0256-307x/9/9/008

1992-01-01

Chinese Physics Letters

Abstract:We have studied the light induced rapid thermal diffusion of boron atom in silicon. The samples were heated by the rapid thermal processor. We have carried out spreading resistance and deep level transient spectroscopy (DLTS) measurements. The impurity distribution profile is much shallower and steeper than that of conventional thermal diffusion and the diffusion depth can be controlled to 0.1 μm. Several peaks in the deep level transient spectra were detected and the density of these defects ranges from 0.5×1012 to 5.6×1012 /cm3. The passivation and annihilation of these defects have been studied. We have also made the planar diode whose diameter is 500 μm. The reverse current and the back breakdown voltage of the planar diode are 10-9 A and 80 V respectively.
Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Hui-juan WANG,Cheng CHEN,Lian-wen DENG,Jian-jun JIANG

DOI: https://doi.org/10.3969/j.issn.1673-2812.2007.02.035

2007-01-01

Abstract:Molecular dynamics simulation is performed to study the vacancy-interstitial annihilation in crystalline silicon.We choose the Stillinger-Weber(SW) potential,which is commonly used for silicon,to describe the interaction between atoms. The simulation is calculated by Verlet algorithm and programmed through C++ in the environment of VC++.The result shows that 111 is the preferred combination direction and there exists an energy barrier in the motion,the value of which is between 0.5eV and 1.2eV.
Solution of the nonstationary diffusion equation for interstitial impurity atoms by the method of Green functions

O.I. Velichko,O.N. Burunova

DOI: https://doi.org/10.48550/arXiv.0809.1113

2008-09-06

Abstract:On the basis of the Green function method, analytical solutions of the diffusion equation which describes nonstationary migration of nonequilibrium interstitial impurity atoms have been derived. It is supposed that the initial distribution of nonequilibrium impurity interstitials is formed due to ion implantation and, therefore, is described by the Gaussian function. The condition of the constant concentration of impurity interstitials (the Dirichlet boundary condition) or reflecting boundary condition was imposed on the surface of a semiconductor. The Dirichlet boundary condition was also enforced for the concentration of impurity interstitials in the infinity, i.e., in the bulk of a semiconductor. On the basis of the solutions derived the redistribution of ion-implanted boron in silicon substrate during low-temperature thermal treatment has been simulated. The calculated profile of boron atoms after annealing agrees well with experimental data. It means that the analytical solutions derived can be used both for verifying the numerical results and for modeling the long-range migration of nonequilibrium impurity interstitials during low-temperature thermal treatments.

Materials Science
Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

XD Pi,PG Coleman,R Harding,G Davies,RM Gwilliam

DOI: https://doi.org/10.1063/1.1738539

IF: 2.877

2004-01-01

Journal of Applied Physics

Abstract:Si nanocrystals embedded in thermally grown SiO2 have been annealed at temperatures between 400 and 900 °C in a variety of atmospheres. Positron annihilation spectroscopy has been employed to study changes in the interface regions between nanocrystalline Si (nc-Si) and SiO2 with the support of photoluminescence measurements. We find that nitrogen and oxygen are trapped in the voids around nc-Si at low annealing temperatures. High-temperature annealing during the formation of nc-Si causes hydrogen originally residing in the SiO2/substrate region to enter the SiO2 structure. Hydrogen diffuse back to the SiO2/substrate region on annealing in vacuum at 400 °C because no other impurities block its diffusion channels. At annealing temperatures above 700 °C, both nitrogen and oxygen react with nc-Si, resulting in a volume increase. This introduces stress in the SiO2 matrix, which is relaxed by the shrinkage of its intrinsic open volume. The present data suggest that nitrogen suppresses Si diffusion in SiO2, so that the agglomeration of nc-Si is slower during annealing in nitrogen than in oxygen or vacuum.
The Role of Point Defects in Anomalous Diffusion of Implanted Boron in Silicon

Xi-mao Bao,Qiang Guo,Mei-sheng Hu,Duan Feng

DOI: https://doi.org/10.1063/1.344401

IF: 2.877

1989-01-01

Journal of Applied Physics

Abstract:The influence of implantation damage on the anomalous diffusion has been observed by varying the relative positions of the boron profile and damage distribution produced by silicon preimplantation at different energies. It is shown that the anomalous diffusion of implanted boron is caused by the implantation damage rather than the fast diffusing interstitial boron. During annealing, the extended defects acting as sinks for point defects retard the anomalous diffusion in and near the defected band, however, for prolonged annealing they begin dissolving and emitting point defects which support the anomalous diffusion.
Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

ZH Jin,BA Gururaj,MWY Yeung,HS Kwok,M Wong

DOI: https://doi.org/10.1109/16.641366

IF: 3.1

1997-01-01

IEEE Transactions on Electron Devices

Abstract:Hall effect measurement was employed to study the isothermal annealing of boron or phosphorus implanted polycrystalline Si1-xGex thin films, with x varying from 0.3-0.55. X-ray diffraction and cross-sectional transmission electron microscopy were used to study the crystal structure, whereas X-ray photoelectron spectroscopy was used to determine the film composition and the chemical bonding states of the elements. In low-temperature (less than or equal to 600 degrees C) annealing, the conductivity, the dopant activation, and the Hall effect mobility decreased during extended annealing. The effective activation of phosphorus was less than 20% and decreased with increasing Ge content, Boron activation could reach above 70%. It was also found that Si1-xGex could be oxidized at 600 degrees C in a conventional furnace even with N-2 protection, especially for phosphorus doped films with high Ge content. Consequently, a low-temperature SiO2 capping layer is necessary during extended annealing.
The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Min Xie,Dongsheng Li,Le Chen,Feng Wang,Xiaodong Zhu,Deren Yang

DOI: https://doi.org/10.1063/1.4798834

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Electrically activated doping of boron (B) atoms into the Si-nanocrystals (Si-NCs) embedded silicon oxide film is achieved by co-sputtering technique following with the annealing treatment. The evolution of the size, the shape, and the density of Si-NCs with the doping of B atoms is investigated. The observation of x-ray photoelectron spectroscopy of Si 2p and B 1s and the decrease in lattice spacing of Si (111) plane suggest that B atoms are doped into Si-NCs. The activated doping is confirmed by the Fano effect of the micro-Raman spectra for Si-NCs and the drastic decrease of the sheet resistance.
J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Ying Zhang,Yang Liu,Hang Zhou,Ping Yang,Jie Zhao,Yu Song

2019-01-01

Abstract:Neutron bombardments with equivalent fluence (1×10 cm) and different fluxes have been performed on one kind of bipolar transistor and two kinds of bipolar circuits. The base currents or input bias currents of almost all samples are found to decrease with increasing neutron flux, implying that the strength of the dynamic annealing of divacancy defects (V−2 ) in n-type silicon follows a positive flux dependence. Such flux dependence is the same as that observed in ions implantation using protons, boron, carbon, and other heavy ions, but the transition flux in our experiment (∼ 1×10 cms) is 4 orders of magnitudes lower than that of proton bombardment, despite the similarity in the masses and energies of the two particles. A new model considering dissipation of diffused Si interstitials was proposed for the flux effect, in which the huge discrepancy in transition fluxes is attributed to the presence of vast charge carriers in proton bombardments, which strongly accelerate the dynamic annealing of defects by enhancing the diffusion velocity of Si interstitials. Our work would contribute to the understanding of the defect buildup processes in silicon.

Interstitial diffusion of ion-implanted boron in crystalline silicon

Simulation of interstitial diffusion of ion-implanted boron

Simulation of boron diffusion during low-temperature annealing of implanted silicon

Simulation of Boron Diffusion during Annealing of Silicon Substrates Undergone a High Fluence Ion Implantation

Change in the microscopic diffusion mechanisms of boron implanted into silicon with increase in the annealing temperature

Different shapes of impurity concentration profiles formed by long-range interstitial migration

Some features of the transport processes of ion-implanted boron under conditions of transient enhanced diffusion suppression

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Interstitial diffusion of arsenic in silicon

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

A Monte Carlo Study of the Kickout Mechanism of Boron Diffusion in Silicon

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Solution of the nonstationary diffusion equation for interstitial impurity atoms by the method of Green functions

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

The Role of Point Defects in Anomalous Diffusion of Implanted Boron in Silicon

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon