Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

Formation of Silicon Ultra Shallow Junction by Nonmelt Excimer Laser Treatment

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Ultra-shallow Junctions Formed Using Microwave Annealing

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Simulation of Boron Diffusion during Annealing of Silicon Substrates Undergone a High Fluence Ion Implantation

Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

Subnanometer-resolution Depth Profiling of Boron Atoms and Lattice Defects in Silicon Ultrashallow Junctions by Ion Beam Techniques

A New Plasma Aided Solid-Source Implantation Method for Ultra-Shallow P/sup +//n Junction Fabrication

Change in the microscopic diffusion mechanisms of boron implanted into silicon with increase in the annealing temperature

Formation of ultra-shallow junctions with pre-amorphization implant and microwave annealing

Simulation of interstitial diffusion of ion-implanted boron

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

Formation of Shallow Junctions during Rapid Thermal Processing from Electron‐Beam Deposited Boron Sources

Point Defect Engineering and Its Application in Shallow Junction Formation

Ultra-shallow junction formation using conventional ion implantation and rapid thermal annealing

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Light Induced Rapid Thermal Diffusion of Boron Atom in Silicon

Interstitial diffusion of ion-implanted boron in crystalline silicon