Abstract:For the formation of ultrashallow junctions, a controlled gaseous ambient during rapid thermal annealing is indispensible. To understand the diffusion/activation mechanism, the influencing and depending variables have to be clarified precisely. Ion implantations of 1 keV boron at a fluence of Φ≈1×1015 cm−2 are annealed isothermally for 10 s at 1000, 1050, and 1100°C in an AST2800ε rapid thermal processing system under controlled concentrations of oxygen in nitrogen ambient (0–1 ppm up to 1%). The concentration‐depth profiles, measured by secondary ion mass spectroscopy, are analyzed within the framework of the kick‐out model involving diffusion enhancement via supersaturation of silicon self‐interstitials and the Fermi‐level effect. The validity of this interpretation is supported by the simulated results which are in good agreement with experimental data. Two input parameters for the SSUPREM IV simulator yield finite values of silicon self‐interstitial supersaturation as a function of temperature and oxygen concentrations, values for the boron diffusion coefficient via neutral and positively charged silicon self‐interstitials, and data for transient enhanced diffusion. After rapid thermal annealing for 10 s at 1050°C, the junctions vary within 800–1400 Å depending on the annealing ambient. © 1999 The Electrochemical Society. All rights reserved.

Formation of Tisi2 and Shallow Junction by As+ Ion-Beam Mixing and Infrared Rapid Heat-Treatment

Ultra-shallow Junctions Formed Using Microwave Annealing

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

CoSi_2/Si Schottky Junction Formed by High Flux Co Ion Implantation

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Electron beam lithography and ion implantation techniques for fabrication of high-Tc Josephson junctions

Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

Point Defect Engineering and Its Application in Shallow Junction Formation

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

Low-resistive and homogenous NiPt-silicide formation using ultra-low temperature annealing with microwave system for 22nm-node CMOS and beyond

Formation of ultra-shallow junctions with pre-amorphization implant and microwave annealing

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

Nickel Silicide Formation on Shallow Junctions

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

Schottky Barrier Height Tuning Via Nickel Silicide As Diffusion Source Dopant Segregation Scheme with Microwave Annealing

Fabrication of high quality Al/AlO_x/Al Josephson junctions

Experimental Study on Laser Anneal of Shallow Junctions and Its Process Model

C54-Tisi2 Formed by Direct High-Current Ti-Ion Implantation