Abstract:Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (~0.1 to 0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) followed by annealing to ~880 degrees C. Conducting atomic force microscopy has been performed on these islands to characterize and measure their current-voltage (I-V) characteristics. Current-voltage curves were analyzed using thermionic emission theory to obtain the Schottky barrier heights and ideality factors between the silicide islands and the silicon substrates. Current-voltage measurements were performed ex situ for samples ("passivated surfaces") where the silicon surface surrounding the islands was passivated with a native oxide. Other samples ("clean surfaces") remained in UHV while I-V curves were recorded. By comparing barrier heights and ideality factors for islands on both surfaces, the effects of the non-passivated surfaces on conduction were studied. The clean surface barrier heights were found to be ~0.2 to 0.3 eV below barrier heights measured from similar islands on passivated surfaces. The reduced Schottky barrier is mainly attributed to Fermi level pinning by non-passivated surface states of the clean silicon surface. However, the measured barrier heights of the clean surface islands are equivalent on both Si(111) and Si(100), suggesting that the non-passivated surfaces are influenced by cobalt impurities. Furthermore, the barrier heights of islands on the clean surfaces are lower than due to Fermi level pinning alone and the additional barrier height lowering is primarily attributed to spreading resistance effects. Schottky barrier inhomogeneity may also cause additional barrier height lowering and non-ideality in the contacts. The clean surface barrier heights decreased and the ideality factors increased with decreasing temperature, which is attributed to the temperature variation of the Fermi level.

CoSi_2/Si Schottky Junction Formed by High Flux Co Ion Implantation

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Continuous Cosi2 Layers in Silicon Synthesized by Co-Ion Implantation

Schottky barrier height lowering induced by CoSi 2 nanostructure

Formation of N-Type Crsi2 Semiconductor Layers on Si by High-Current Cr Ion Implantation

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

Schottky Barrier Mosfet Structure with Silicide Source/Drain on Buried Metal

Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si

Formation of Tisi2 and Shallow Junction by As+ Ion-Beam Mixing and Infrared Rapid Heat-Treatment

Solid-Phase Reaction And Schottky Contact Properties Of Co/N-Poly-Si0.84ge0.16/N-Si(100)

Epitaxial Cosi2 Layers Fabricated by A Single-Step Technique of High-Current Co-Ion Implantation

Schottky Barrier Characteristics of Polycrystalline and EpitaxialCoSi2/n-Si(111) Contacts Formed by Solid State Reaction

Ti–Si Compounds Formation by High-Current Ion Implantation

Conducting Atomic Force Microscopy Studies of Nanoscale Cobalt Silicide Schottky Barriers on Si(111) and Si(100)

Role of Si Implantation in Control of Underlap Length in Schottky-barrier Source/drain MOSFETs on Ultrathin Body SOI

Design consideration of ion implantation in dopant segregation technique at NiSi/Si interface

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Electron Field Emission from SiC∕Si Heterostructures by High Temperature Carbon Implantation into Silicon

Influences Of H-2(+) And He+ Co-Implantation Into Silicon On Electric Characteristics Of Mosfets