Epitaxial Cosi2 Layers Fabricated by A Single-Step Technique of High-Current Co-Ion Implantation

HN Zhu,BX Liu
DOI: https://doi.org/10.1088/0022-3727/32/23/101
1999-01-01
Abstract:In this communication, the plain and continuous epitaxial CoSi2 was first synthesized on Si(111) wafers with metal vacuum vapour arc ion implantation without in situ heating or post-annealing. The measurements on the CoSi2 layers showed that increasing the formation temperature and the implantation dose can improve the crystallinity of CoSi2.
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