Schottky barrier height lowering induced by CoSi 2 nanostructure

Yu-Long Jiang,Xin-Ping Qu,Guo-Ping Ru,Bing-Zong Li

DOI: https://doi.org/10.1007/s00339-009-5516-4

2009-01-01

Abstract:CoSi 2 nanostructures were formed through thermal agglomeration by annealing ultrathin Co film on Si substrate at high temperatures. The characteristics of the Schottky diodes with CoSi 2 nanostructures capped by a Pt layer were measured and fitted using thermionic emission theory. All the diodes have a ideality factor less than 1.1. The results show that the Schottky barrier height of these diodes significantly decreases as the annealing temperature for CoSi 2 agglomeration increases. The barrier height lowering is correlated with the agglomeration of CoSi 2 film and the formation of CoSi 2 nano-islands. The thermal field emission may be the major reason to cause barrier lowering. Although the Schottky contact interface consists of both CoSi 2 nano-islands and Pt film whose individual contact barrier height to Si is very different, the current-voltage-temperature measurements reveal that the interface homogeneity is not degraded as expected. The study demonstrates that the CoSi 2 nanostructures can both lower the Schottky barrier height and form an ideal Schottky contact with a Pt capping layer.