Abstract:The material and electrical characterization of nickel germanides on pure n-(100) Ge are investigated in this paper. The nickel germanides were achieved by rapid thermal annealing (RTA) in N2 ambient for 60s at different temperature. And X-ray diffraction (XRD) and Raman measurements were used to determine the crystal phase of Ni germanides. The results show that the ion implantation of BF2 before germanidation is favorable for the formation of low-resistivity monogermanide phase (NiGe). Ni-rich germanide phase exists when annealed at 300°C for pure-Ge without BF2 implantation, while only NiGe is formed for that with BF2 implantation. As a result, the sheet resistance of the film annealed at 300°C is ∼9.6Ω/□ and ∼3.8Ω/□ for the samples without/with BF2 implantation, respectively. Besides, we firstly observed the Raman peak at ∼217cm-1 corresponding to NiGe, which has not been reported till now. In addition, it is also experimentally demonstrated that the Ti-capping layer technique is beneficial to better surface morphology. Furthermore, the electrical characteristics of NiGe/pure-Ge Schottky diodes is presented. The strong dependence of Schottky barrier height (Φb) and the ideality factor (n) on the contact hole size is also firstly observed through the experiments. When annealed at 400°C, the Schottky barrier height (Φb) of Schottky diodes formed on pure-Ge substrate decreases from 0.53eV to 0.42eV with the contact size decreasing, while the ideality factor(n) increases remarkably, which may provide the guideline for the application to Schottky source/drain germanium transistors.

The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode.

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Impact of ion implantation on nickel germanides formation with pure-Ge substrate and the electrical dependence of NiGe/Ge schottky diode on contact size

Fabrication and Characteristics of Ni-Germanide Schottky Contacts with Ge

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Study on Schottky Barrier Modulation of NiGe/Ge by Ion-Implantation after Germanidation Technique

Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes

Studies of Ti- and Ni-Germanide Schottky Contacts on N-Ge(100) Substrates

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

Pt interlayer effects on Ni germanosilicide formation and contact properties

The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes

Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Characterization Of The Inhomogeneous Barrier Distribution In A Pt/(100) Beta-Ga2o3 Schottky Diode Via Its Temperature-Dependent Electrical Properties

A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range

Effect of thermal annealing on GaN pn-junction diode with Pt/Ag as ohmic contact

Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon

Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique