Abstract:The forward current-voltage characteristics of epitaxial CoSi2 contacts grown by Ti-interlayer mediated epitaxy (TIME) scheme on n-type Si substrates of both (100) and (111) orientations are studied in the temperature range from 80 to 300 K. At high temperatures (>220 K), the I-V characteristics obey the ideal thermionic emission model. The Schottky barrier heights stay similar to 0.61 eV and the ideality factors are close to unity. At low temperatures, a change in the characteristics is observed around 10(-4) A/cm(2), which is more significant for the contacts on Si (111) than for those on Si (100). Above this current, the I-V curves can also be fitted by the equation based on the thermionic emission theory, but the apparent barrier heights decrease and the ideality factors increase with decreasing temperature. This abnormal behavior, as well as the curved Richardson plots, are interpreted by the assumption of a Gaussian distribution of barrier heights, which is in agreement with the statistical distribution obtained directly from ballistic electron emission microscopy (BEEM) measurements. The excess current at small bias region is explained by coexistence of some small patches of reduced barrier height with the pinch-off model. The CoSi2 contacts on Si (111) contain more patches with larger parameter values than those on Si (100), which causes a significant difference in the I-V characteristics at low temperature. (C) 2000 Elsevier Science Ltd. All rights reserved.

A BEEM Study on Effects of Annealing Temperature on Barrier Height Inhomogeneity of CoSi2/Si Contact Formed in Co-Ti-Si Systems

A Beem Study of Schottky Barrier Height Distributions of Ultrathin Cosi2/N-Si(100) Formed by Solid Phase Epitaxy

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction

Ballistic Electron Emission Microscopy Studies Of The Temperature Dependence Of Schottky Barrier Height Distribution In Cosi2/N-Si(100) Diodes Formed By Solid Phase Reaction

Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si

Schottky Barrier Characteristics of Polycrystalline and EpitaxialCoSi2/n-Si(111) Contacts Formed by Solid State Reaction

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Effects of Annealing Temperature on Magnetic Properties of Co Thin Films on Si (100)

Effects of Annealing Temperature on the Characteristics of Au/Ti/4H-SiC Schottky Contact

Annealing Temperature Influence on the Degree of Inhomogeneity of the Schottky Barrier in Ti/4h-Sic Contacts

Formation of Epitaxial CoSi2 Layers Grown from the Interaction of Co/Ti Bilayers with Si <100> Substrates

Schottky Barrier Characteristics of Ternary Silicide Co1−xNixSi2 on N-Si(1 0 0) Contacts Formed by Solid Phase Reaction of Multilayer

Schottky barrier height lowering induced by CoSi 2 nanostructure

Investigations into Temperature Characteristics of Ti-Si_(0.84)Ge_(0.16) and Ti-Si Systems

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

A BEEM Study of the Temperature Dependence of the Barrier Height Distribution in PtSi/n-Si Schottky Diodes

I-V-T studies on ternary silicide Co1-xNixSi2/n-Si Schottky contacts

Electrical Characteristics of Cosi2/N-Si(100) Schottky Barrier Contacts Formed by Solid State Reaction