Abstract:The development of interdigitated back contact silicon heterojunction has been flourishing in the field of solar cells. The front surface field has a decisive influence on the electrical field effect passivation of interdigitated back contact silicon heterojunction solar cells, and the effect of passivation layers on the performance of solar cells needs to be clarified. In this study, the two-dimension TCAD models of the doped n+-a-Si: H layer and SiNx with a fixed charge layer were established by the Sentaurus code, respectively. The space charge density and electric field intensity, carrier transportation, and distribution of current density were numerically analyzed to evaluate the effect of these two front surfaces on the performance of interdigitated back contact silicon heterojunction solar cells. The results show that for SiNx, the root cause of the field passivation is the surface fixed charge density. The combination of the doping concentration and layer thickness directly affects the field passivation of n+-a-Si: H. Based on the intuitive carrier transport vector, the selective transportation of the carrier near the surface is proved by the front surface field, which effectively inhibits the recombination. The current density distribution on the cross-section reveals that a strong front surface field is an effective way to reduce the internal recombination in particular. Considering practical operating conditions, a doping concentration of 1e20 cm−3, in combination with 7 nm layer thickness, potentially improves the front surface field of n+ a-Si: H leading to the maximum conversion efficiency of 27.41%, with the voltage increased by 32.8 mV and the fill factor reaching 86.84%.

Back-Surface-Field Effects at the Heterojunctions between Boron-Doped p-Type Hydrogenated Amorphous Silicon and Crystalline Silicon in Thin-Film Crystalline Silicon Solar Cells

Study on solid-phase crystallization of B-doped a-Si:H film

Efficiency improvement of crystalline silicon solar cells with a back-surface field produced by boron and aluminum co-doping

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Boron Diffusion Of The Silicon Solar Cell With Bbr3

Boron Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Layer-by-layer Technique and Its Application in N-I-p Flexible Amorphous Silicon Thin Film Solar Cells

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Nanocrystalline‐silicon hole contact layers enabling efficiency improvement of silicon heterojunction solar cells: Impact of nanostructure evolution on solar cell performance

An insight into effect of front surface field on the performance of interdigitated back contact silicon heterojunction solar cells

Heavy Boron-Doped Silicon Tunneling Inter-layer Enables Efficient Silicon Heterojunction Solar Cells

Abnormal Staebler-Wronski effect of amorphous silicon

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Effective Passivation of Black Silicon Surfaces via Plasma‐Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Role of the Buffer at the Interface of Intrinsic A-Si:H and P-Type A-Si:H on Amorphous/crystalline Silicon Heterojunction Solar Cells

Improved Performance of Silicon Heterojunction Solar Cells Via 3× Three-Step Boron-Doping

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

Intrinsic layer modification in silicon heterojunctions: Balancing transport and surface passivation