Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Copper Precipitates in Multicrystalline Silicon for Solar Cells

Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

(Invited) Defects in Cast-Mono Crystalline Silicon

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Role of Metal Impurities in Multicrystalline Silicon Solar Cell Degradation

Copper Precipitation in Nitrogen-Doped Czochralski Silicon

Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Characterization of Silicon Surface States at Clean and Copper Contaminated Condition Via Transient Capacitance Measurement

Effect of Silicon Interstitials on Cu Precipitation in N-Type Czochralski Silicon

Oxygen Annealing Behavior in Multicrystalline Silicon

Recombination behavior of nickel in cast multicrystalline silicon

Aluminum Gettering in Photovoltaic Silicon

Influence of Copper Precipitation on Oxygen Precipitation in Czochralski Silicon

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Iron Precipitation in Crystalline Silicon

Influence of metallic impurities on oxygen precipitation in Czochralski-grown silicon