Abstract:The influence of nickel precipitation on the formation of denuded zone (DZ) in Czochralski silicon (Cz Si) was systematically investigated by means of Scanning Infrared Microscopy (SIRM) and optical microscopy (OM). It was found that, for conventional high-low-high annealing (CFA), the DZ can be obtained in all specimens contaminated by nickel impurity at different steps of the heat treatment, indicating that no nickel precipitates generated in the region just below the surface. Additionally, the width of the DZ is nearly the same in all specimens although the contamination sequence is different, indicating that the contamination temperature, that is, the corresponding equilibrium concentration of interstitial nickel in the silicon doesn’t influence significantly the thermodynamics and kinetics process of the formation of nickel precipitates. For Rapid thermal annealing (RTA)-low-high annealing, the tendency remained unchanged. On the basis of the experimental results, it is supposed that the formation of DZ is strongly influenced by the segregation gettering and intrinsic gettering of the nickel atoms, which were caused by the formation of nickel-silicon (Ni–Si) alloys close to the surface, oxygen precipitates and extended defects in the bulk, respectively.

Influence of metallic impurities on oxygen precipitation in Czochralski-grown silicon

Influence of Copper Precipitation on Oxygen Precipitation in Czochralski Silicon

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

Influences of Oxygen Precipitation on Vickers Hardness of Czochralski Silicon

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Precipitation of Cu and Fe impurities on dislocations in Czochralski-grown silicon

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Effect of Iron on Oxygen Precipitation in Nitrogen-Doped Czochralski Silicon

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Correlation Between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Impact of Transition-Metal Contamination on Oxygen Precipitation in Czochralski Silicon Under Rapid Thermal Processing

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Transmission Electron Microscopic Observation of Oxygen Precipitates in Nitrogen-Doped Silicon

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Influence of iron impurity on oxygen precipitation in NCZ-Si

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si