Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Precipitation of Cu and Fe impurities on dislocations in Czochralski-grown silicon

Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon

Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon

Electrical Activity of Frank Partial Dislocations and the Influence of Metallic Impurities in Czochralski-Grown Silicon

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

Influence of metallic impurities on oxygen precipitation in Czochralski-grown silicon

Gettering of Fe Impurities by Bulk Stacking Faults in Czochralski-Grown Silicon

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Influence of Metal Impurities on Recombination Activity of Dislocations in Multicrystalline Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Deformation of Fe and Ag Precipitates in Cu Matrix

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Copper Precipitation in Nitrogen-Doped Czochralski Silicon