Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

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Gettering of Fe Impurities by Bulk Stacking Faults in Czochralski-Grown Silicon

EBIC study on the electrical activity of stacking faults in silicon

Precipitation of Cu and Fe impurities on dislocations in Czochralski-grown silicon

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

Electrical Activity of Frank Partial Dislocations and the Influence of Metallic Impurities in Czochralski-Grown Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon

Influence of metallic impurities on oxygen precipitation in Czochralski-grown silicon

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Transmission Electron Microscopic Observation of Oxygen Precipitates in Nitrogen-Doped Silicon

Atypical U-shape micro-stacking faults within body-centered tetragonal Zr2Si nanoparticle in silicon modified Zircaloy-4 alloy

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Stacking fault segregation imaging with analytical field ion microscopy

Effect of Oxygen Precipitates and Induced Dislocations on Oxidation-Induced Stacking Faults in Nitrogen-Doped Czochralski Silicon