Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon

Precipitation of Cu and Fe impurities on dislocations in Czochralski-grown silicon

Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

Influence of metallic impurities on oxygen precipitation in Czochralski-grown silicon

Copper Precipitates in Multicrystalline Silicon for Solar Cells

Deformation of Fe and Ag Precipitates in Cu Matrix

Influence of Metal Impurities on Recombination Activity of Dislocations in Multicrystalline Silicon

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Density gradient segregation of Cu at the Si 2 Hf/Al interface in an Al-Si-Cu-Hf alloy

Dislocation loop and irradiation-induced synergistic-competitive mechanism in Cu-rich precipitates: a phase-field study

(Invited) Defects in Cast-Mono Crystalline Silicon

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

Correlation Between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

Iron Precipitation in Crystalline Silicon

Numerical Simulation of Copper Precipitation During Aging in Deformed Fe-Cu Alloys

Copper Precipitation in Nitrogen-Doped Czochralski Silicon

Cu precipitation on dislocation and interface in quench-aged steel