Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Electrical Activity of Frank Partial Dislocations and the Influence of Metallic Impurities in Czochralski-Grown Silicon

Precipitation of Cu and Fe impurities on dislocations in Czochralski-grown silicon

EBIC study on the electrical activity of stacking faults in silicon

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon

Gettering of Fe Impurities by Bulk Stacking Faults in Czochralski-Grown Silicon

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-Sic Homoepitaxial Films

Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Direct Imaging and Optical Activities of Stacking Faults in 4H-Sic Homoepitaxial Films

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Competitive Role of Impurities on the Electrical Activity of As-Grown Σ=13, Σ=25 and Deformed Σ=9 Grain Boundaries in P-Type Silicon Bi-crystals

Influence of Metal Impurities on Recombination Activity of Dislocations in Multicrystalline Silicon

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

EBIC study of dislocations and stacking faults in 4 H-SiC homoepitaxial films