Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

EBIC study on the electrical activity of stacking faults in silicon

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

Electrical Activity of Frank Partial Dislocations and the Influence of Metallic Impurities in Czochralski-Grown Silicon

Electron-beam-induced Current Study of Grain Boundaries in Multicrystalline Si

Gettering of Fe Impurities by Bulk Stacking Faults in Czochralski-Grown Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Electrical Properties of Oxygen Precipitate-Related Defects in Czochralski Silicon

Unveiling Phonon Frequency-Dependent Mechanism of Heat Transport Across Stacking Fault in Silicon Carbide

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Effect of Oxygen Precipitates and Induced Dislocations on Oxidation-Induced Stacking Faults in Nitrogen-Doped Czochralski Silicon

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC

Oxidation-Induced Stacking Faults in Nitrogen-Doped Czochralski Silicon Investigated by Transmission Electron Microscope

Stacking Faults in 4h–sic Epilayers and IGBTs

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers