Abstract:Despite the promising properties, the problem of cubic silicon carbide (3C-SiC) heteroepitaxy on silicon has not yet been resolved and its use in microelectronics is limited by the presence of extensive defects. In this paper, we used microphotoluminescence (μ-PL), molten KOH etching, and high-resolution scanning transmission electron microscopy (HRSTEM) to investigate the effect of nitrogen doping on the distribution of stacking faults (SFs) and assess how increasing dosages of nitrogen during chemical vapor deposition (CVD) growth inhibits the development of SFs. An innovative angle-resolved SEM observation approach of molten KOH-etched samples resulted in detailed statistics on the density of the different types of defects as a function of the growth thickness of 3C-SiC free-standing samples with varied levels of nitrogen doping. Moreover, we proceeded to shed light on defects revealed by a diamond-shaped pit. In the past, they were conventionally associated with dislocations (Ds) due to what happens in 4H-SiC, where the formation of pits is always linked with the presence of Ds. In this work, the supposed Ds were observed at high magnification (by HRSTEM), demonstrating that principally they are partial dislocations (PDs) that delimit an SF, whose development and propagation are suppressed by the presence of nitrogen. These results were compared with VESTA simulations, which allowed to simulate the 3C-SiC lattice to design two 3C-lattice domains delimited by different types of SFs. In addition, through previous experimental evidence, a preferential impact of nitrogen on the closure of 6H-like SFs was observed as compared to 4H-like SFs.

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Stacking faults at the boundary between 15R- and 4H-polytype in SiC

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Direct Imaging and Optical Activities of Stacking Faults in 4H-Sic Homoepitaxial Films

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Stacking Fault Duplication in 6H-Sic Single Crystal

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-Sic Homoepitaxial Films

Ab Initio Molecular Dynamics Simulation of the Effects of Stacking Faults on the Radiation Response of 3C-Sic

Surface Defects and Accompanying Imperfections in 4h–sic: Optical, Structural and Electrical Characterization

Defects in epitaxial 4H-SiC revealed by exciton recombination

Ultraviolet-visible light photoluminescence induced by stacking faults in 3C-SiC nanowires.

Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography

In Situ Monitoring of Stacking Fault Formation and Its Carrier Lifetime Mediation in P-Type 4H-Sic

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Raman Microprobe Mapping of Residual Microstresses in 3C-Sic Film Epitaxial Lateral Grown on Patterned Si(1 1 1)

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing