Abstract:Frank-type stacking faults in 4H–SiC epitaxial layers were investigated using room-temperature photoluminescence mapping and high-angle annular dark-field high-resolution scanning transmission electron microscopy. Remarkably, the intrinsic Frank-type stacking fault (5,2) and intrinsic multilayer Frank-type stacking fault (4,2), which have been reported to have elongated triangular shapes to date, were found to have broader triangular shape, which was typical shape of Shockley-type stacking faults. The shaping of stacking faults could be explained based on the directions of the partial dislocations bounding the stacking faults. Formation models for the intrinsic (5,2) and (4,2) stacking faults were proposed. In addition, we observed Frank-type stacking faults (3,2,2,3) and (3,3) and Shockley-type stacking faults (3,3,3,2,3,2) and (3,2,3,3,3,2), which were not reported before. All of these stacking faults were composed with the stacking numbers 2 and 3 in the Zhdanov notation and showed very close characteristic photoluminescence emission wavelengths of 427–428 nm. Formation models for the stacking faults of (3,2,2,3), (3,3), (3,3,3,2,3,2), and (3,2,3,3,3,2) were proposed, also. Based on the proposed formation models of (4,2) and (3,3) stacking faults, formation models for the Frank-type stacking faults (4,1) and (3,2) were discussed. Finally, we pointed out that the (4,1) Frank-type stacking fault should be the intrinsic not the extrinsic fault, and the (3,2) Frank-type stacking fault is the extrinsic fault.

Morphology of single Shockley-type stacking faults generated by recombination enhanced dislocation glide in 4H–SiC

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-Sic Homoepitaxial Films

Stacking faults at the boundary between 15R- and 4H-polytype in SiC

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Contrast Analysis of Shockley Partial Dislocations in 4H-Sic Observed by Synchrotron Berg–Barrett X-ray Topography

Stacking Fault Duplication in 6H-Sic Single Crystal

Analysis of Dislocation Structures in 4H-Sic by Synchrotron X-ray Topography

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices

Electron-Beam-Induced Current And Cathodoluminescence Study Of Dislocation Arrays In 4h-Sic Homoepitaxial Layers

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Contrast of Dislocations in 4H-Sic by SR Topography in Grazing-Incidence Geometry

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode

Structure and Stability of Partial Dislocation Complexes in 3C-SiC by Molecular Dynamics Simulations

Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Amorphization and Dislocation Evolution Mechanisms of Single Crystalline 6H-SiC

Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterization

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals