Abstract:We present a surface stacking fault (SSF) energy approach to predicting defect nucleation from the surfaces of surface-dominated nanostructure such as FCC metal nanowires. The approach leads to a criteria that predicts the initial yield mechanism via either slip or twinning depending on whether the unstable twinning energy or unstable slip energy is smaller as determined from the resulting SSF energy curve. The approach is validated through a comparison between the SSF energy calculation and low-temperature classical molecular dynamics simulations of copper nanowires with different axial and transverse surface orientations, and cross sectional geometries. We focus on the effects of the geometric cross section by studying the transition from slip to twinning previously predicted in moving from a square to rectangular cross section for $\ <100\ > /\{100\}$ nanowires, and also for moving from a rhombic to truncated rhombic cross sectional geometry for $\ <110\ >$ nanowires. \hsp{We also provide the important demonstration that the criteria is able to predict the correct deformation mechanism when full dislocation slip is considered concurrently with partial dislocation slip and twinning. This is done in the context of rhombic aluminum nanowires which do not show a tensile reorientation due to full dislocation slip.} We show that the SSF energy criteria successfully predicts the initial mode of surface-nucleated plasticity at low temperature, while also discussing the effects of strain and temperature on the applicability of the criterion.

Comparison among the Growth Mechanisms of Stacking-Fault, Twin Lamella and Screw Dislocation - A Monte-Carlo Simulation

A Comparison Between the Growth Mechanism of Stacking Fault and of Screw Dislocation

Stacking Fault Growth of F.c.c. Crystal: the Monte-Carlo Simulation Approach

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Re-entrant Corner Mechanism of Fcc Crystal Growth of A-Type Twin Lamella: the Monte-Carlo Simulation Approach

Local Lattice Distortion Mediated Formation of Stacking Faults in Mg Alloys

The growth mechanism and kinetics on stacking fault reconsidered

Stacking faults as self-perpetuating step sources

Evolution of Stacking-Fault-Tetrahedron-Like Structures in Copper Crystal

Growth-Mechanism and Kinetics on Reentrant Corner and Twin Lamellae in an Fcc Crystal

Disappearance of a Stacking Fault in Hard-Sphere Crystals under Gravity

Determination of Stacking Fault Probability in Fcc Fe-Mn-Si-Al Alloy by Electron Diffraction

Melting of Defective Cu with Stacking Faults

Defect mechanisms of crystal growth and their kinetics

Automated identification of stacking faults and twin boundaries in face-centered cubic crystal

A Surface Stacking Fault Energy Approach to Predicting Defect Nucleation in Surface-Dominated Nanostructures

Mechanism Transition of Cross Slip with Stress and Temperature in Face-Centered Cubic Metals

Molecular Dynamics of Screw Dislocation Motion Characteristic in Si Crystal

Generalized-Stacking-Fault Energy And Dislocation Properties In Bcc Fe: A First-Principles Study

Multiscale Modeling of Lattice Dynamical Instability in Gamma-Tial Crystal

Molecular Dynamics Simulation of Interaction Between a 60°Dislocation and Vacancy Defects in Si Crystal