Abstract:Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a phenomenon termed step bunching, which corresponds to an instability of the equal-spacing step propagation. Over the last fifty years, various mechanisms have been proposed to explain step bunching, the most prominent of which are the inverse Ehrlich-Schwoebel effect (i.e., the asymmetry which favors the attachment of adatoms from the upper terrace), elastically mediated interactions between steps (in heteroepitaxy), step permeability (in electromigration-controlled growth), and the chemical effect (which couples the diffusion fields on all terraces). Beyond the discussion of the influence of each of these mechanisms taken independently on the propensity to bunching, we propose a unified treatment of the effect of these mechanisms on the onset of the bunching instability, which also accounts for their interplay. This is done in the setting of the so-called quasistatic approximation, which by permitting mostly analytical treatment, offers a clear view of the influence on stability of the combined mechanisms. In particular, we find that the Ehrlich-Schwoebel effect, elastic step-interactions and the chemical effect combine in a quasi-additive fashion, whereas step permeability is neither stabilizing nor destabilizing per se but changes the relative influence of the three aforementioned mechanisms. In a companion paper, we demonstrate and discuss the importance of another mechanism, which we call the dynamics effect, that emerges when relaxing the simplifying but questionable quasistatic approximation.

Stacking faults as self-perpetuating step sources

The growth mechanism and kinetics on stacking fault reconsidered

Stacking Fault Growth of F.c.c. Crystal: the Monte-Carlo Simulation Approach

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Local Lattice Distortion Mediated Formation of Stacking Faults in Mg Alloys

Twin lamellae as possible self-perpetuating step sources

A Comparison Between the Growth Mechanism of Stacking Fault and of Screw Dislocation

Comparison among the Growth Mechanisms of Stacking-Fault, Twin Lamella and Screw Dislocation - A Monte-Carlo Simulation

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

Disappearance of a Stacking Fault in Hard-Sphere Crystals under Gravity

Strong Electron Confinement By Stacking-fault Induced Fractional Steps on Ag(111) Surfaces

Faceted-rough surface in the non-equilibrium steady state near equilibrium

Revisiting step instabilities on crystal surfaces. Part I: The quasistatic approximation

Defect mechanisms of crystal growth and their kinetics

Stress transmission through three-dimensional granular crystals with stacking faults

Unraveling the dynamics of stacking fault nucleation in ceramics: A case study of aluminum nitride

Atypical U-shape micro-stacking faults within body-centered tetragonal Zr2Si nanoparticle in silicon modified Zircaloy-4 alloy

A Surface Stacking Fault Energy Approach to Predicting Defect Nucleation in Surface-Dominated Nanostructures

Phonon Spectrum at a Stacking Fault