Stacking Fault Growth of F.c.c. Crystal: the Monte-Carlo Simulation Approach

JM JIN,NB MING
DOI: https://doi.org/10.1016/0038-1098(89)90995-2
IF: 1.934
1989-01-01
Solid State Communications
Abstract:The Monte-Carlo simulation method has been used to simulate the growth of the f.c.c. (111) crystal surface, on which emerged the outcrop of a stacking fault bounded by two partial dislocations. The comparison of the growth rates has been made between the stacking-fault-containing surface and the perfect surface. The successive growth stages have been simulated. The influence of the width of the stacking fault on the growth rates of the (111) surface has also been studied. We conclude that the outcrop of the stacking fault bounded by two partial dislocations on the crystal surface can act as a self-perpetuating step-generating source.
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