Abstract:Making use of the first nearest neighbour approximation it is shown that the sub-step created on a (111) face of an fcc crystal by stacking fault makes the barrier for the two-dimensional (2D) heterogeneous nucleation on the surface about twice as low as that predicted by Ming et al. [J. Crystal Growth 91 (1988) 11]. Thus, the stacking fault growth mechanism is much more effective for the step generation on the growing surface as it was considered earlier.

The growth mechanism and kinetics on stacking fault reconsidered