Abstract:Mechanisms of defect formation near surface ledges of a diamond cubic crystal subjected to compressive strain parallel to the surface are investigated as precursory processes to dislocation nucleation in Si1-xGex/Si(100) heteroepitaxial thin films under surface diffusion conditions. This study is motivated by our preliminary calculations of dislocation formation at surface ledges in a model crystal characterized by the 6–12 Lennard-Jones interatomic potential, and by our controlled annealing experiments on evolution of a Si1-xGex/Si(100) film from an atomically flat, defect-free, surface morphology to an undulating surface morphology with cusp-like surface features and dislocation formation at the cusp valley. When subjecting such films to high temperature anneals, we observed nucleation and growth of three types of dislocations: the 60° glide dislocations, the 90° Lomer-Cottrell dislocations with stair rod Shockley partials and twinned wedge disclinations with twofold ∑9 coincidence boundaries between the wedge and matrix. The objective of this paper is to examine the sequence of atomistic processes which lead to the formation of each of these three types of defects, and in doing so we hope to foster a link between the continuum picture of dislocation nucleation in thin films and the quantum mechanical picture of the unstable collapse of surface ledges due to compressive strain. While we do not actually perform quantum mechanical calculations in this paper, attempts will be made to identify the critical problems that need to be addressed at the quantum mechanics level. Although the present study should be of general interest in the study of dislocation formation near crystal surface ledges, we will confine our discussion to the problem of dislocation formation during stress driven mass transport via surface diffusion in heteroepitaxial thin films which are morphologically unstable under cycloid-like variations in surface shape. The following process is envisioned as undulations form in the film surface. As the curvature at the root of a surface ‘valley’ increases, the local elastic strain magnitude rises as a result of the local geometrical magnification of stress. The strain continues to increase in magnitude as the root sharpens, until atomic ledges collapse to form dislocations. Due to the resulting stress relief, subsequent mass transport reverses its direction of flow and causes such dislocations to be trapped as bulk defects as the film surface moves away from the nucleation sites. Through this mechanism, dislocations can be nucleated without glide by surface trapping in films with even a modest level of nominal compressive mismatch strain.

Molecular Dynamics Simulation of Interaction Between a 60°Dislocation and Vacancy Defects in Si Crystal

Molecular Dynamics of Screw Dislocation Motion Characteristic in Si Crystal

Influence of Reconstruction Defects on Dislocation Motion in Si

In Situ Atomistic Observation of Grain Boundary Migration Subjected to Defect Interaction

Atomistic Simulation of the 60∘ Dislocation Mobility in Silicon Crystal

Phase Field Crystal Simulation of the Effect of Temperature on Low-Angle Symmetric Tilt Grain Boundary Dislocation Motion

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Atomistic Simulation Analysis of the Effects of Void Interaction on Void Growth and Coalescence in a Metallic System

Molecular Dynamics Simulations of the Interaction Between 60° Dislocation and Self-Interstitial Cluster in Silicon

Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating

Molecular Dynamics Study on the 60° Dislocation in Silicon

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

A molecular dynamics study of atomic configurations of dislocations accompanying twins in crystal growth of Si from melt

Building Silicon Crystal Dislocation Models for Molecular Dynamics Simulation

Nucleation and dynamics of dislocations in mismatched heterostructures

A Molecular Dynamics Study of Nucleation of Dislocation in Growth of Silicon from Melt

Simulations of the Interactions Between Dislocations and Solute Atoms in Different Loading Conditions

Atomistic models of dislocation formation at crystal surface ledges in Si<sub>1-x</sub>Ge<sub>x</sub>/Si(100) heteroepitaxial thin films

Computer Simulation on Dislocation Intermittent Motion in the Presence of Solute Atoms

Molecular Dynamics Study of Release Mechanism of Stress at Si/Ge Interface on a Nanoscale

Effect of Lattice Misfit on the Evolution of the Dislocation Structure in Ni-based Single Crystal Superalloys During Thermal Exposure