Properties of the structural defects during SiC–crystal–induced crystallization on the solid–liquid interface

Yue Gao,Wanjun Yan,Tinghong Gao,Qian Chen,Wensheng Yang,Quan Xie,Zean Tian,Yongchao Liang,Jun Luo,Lianxin Li

DOI: https://doi.org/10.1016/j.mssp.2020.105155

IF: 4.1

2020-09-01

Materials Science in Semiconductor Processing

Abstract:<p>The high-quality growth of semiconducting single crystals is the basis of the fabrication of high-performance devices. SiC is a promising semiconductor material for fabricating power electronics and radio frequency devices that require crystals to exhibit less crystal defects and high crystal density. In this study, the crystallization induced by the zinc blende crystal structure in SiC crystals on the solid–liquid interface was studied via molecular dynamics simulations. Further, the formation mechanism of the structural defects in SiC crystals is characterized using the radial distribution function, crystallization rate, bond angle distribution function, Voronoi polyhedron, and visualization technology. The results indicate that majority of the atoms on the solid–liquid interface gradually freeze to form crystal structures induced by the nearby stable crystals and that a small number of atoms with relatively high energy randomly diffuse into the liquid regions. Four common defects (vacancy defects, lattice distortion, interstitial atoms, and substitutional defects) are located in different regions in this system. Lattice distortions are commonly formed during the initial stage of crystallization and are decreased during the isothermal process. However, the interstitials and vacancy defects in the crystal are difficult to eliminate during the isothermal process at 3100 K.</p>

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied

What problem does this paper attempt to address?

### Problems Addressed by the Paper

This paper primarily explores the formation mechanisms and evolution processes of structural defects during the crystallization induced by silicon carbide (SiC) crystals at the solid-liquid interface (S/L). Specifically, the study uses molecular dynamics (MD) simulations to investigate the crystallization process of SiC crystals at the solid-liquid interface under isothermal conditions at 3100 K, and analyzes four common types of defects (vacancies, lattice distortions, interstitial atoms, and substitutional atom defects).

#### Main Research Content:
1. **Defect Formation During Crystallization**: Characterizing the formation mechanisms of structural defects in SiC crystals using radial distribution function (RDF), crystallization rate, bond angle distribution function, Voronoi polyhedra, and visualization techniques.
2. **Defect Distribution and Evolution**: Studying the distribution and evolution of different types of defects in the system during the isothermal process.
3. **Crystallization Rate Analysis**: Analyzing the trend of crystallization rate over time and exploring the impact of structural changes on the crystallization rate.
4. **Bond Angle Analysis**: Analyzing the orderliness of the crystal structure and lattice distortions in the system using the bond angle distribution function.
5. **Voronoi Analysis**: Quantitatively describing the changes in local structures in the system using Voronoi polyhedra, particularly the formation and evolution of tetrahedral structures.
6. **Visualization Analysis**: Using visualization techniques to display the positions and types of crystal defects, including the specific forms of vacancies, lattice distortions, interstitial atoms, and substitutional atom defects.

#### Conclusions:
1. At the solid-liquid interface, most atoms gradually freeze to form a crystal structure, while a few high-energy atoms randomly diffuse into the liquid phase region.
2. Vacancies, lattice distortions, interstitial atoms, and substitutional atom defects are the four common types of defects in the system, with lattice distortions and substitutional atom defects preferentially forming in the induced crystallization region, while interstitial atoms are more likely to appear at the solid-liquid interface.
3. Lattice distortions typically form in the early stages of crystallization and gradually decrease during the isothermal process; however, interstitial atoms and vacancies in the crystal are difficult to eliminate under isothermal conditions at 3100 K.
4. With the increase in relaxation time, the number of tetrahedral <4 0 0 0> clusters in the system increases, indicating an increasing number of tetrahedral structures in the solid-liquid system.

Through these studies, the paper provides important theoretical basis and technical means for understanding the crystallization process and defect formation mechanisms of SiC crystals under high-temperature conditions.