Abstract:Through comparative investigation on the growth of oxidation-induced stacking faults (OSFs) in heavily antimony (Sb)-doped and phosphorus (P)-doped Czochralski (Cz) silicon wafers with almost the same resistivity, effects of dopants on the growth of OSF in heavily doped n-type Cz silicon are studied experimentally. Moreover, the influences of Sb and P atoms on the recombination of self-interstitials and vacancies are also explored on the basis of the first-principles calculations. It is shown experimentally that all the OSF lengths are almost identical regardless of the type and density of OSF nucleation centers, such as copper precipitates and mechanical scratches etc.. However, it is found that the OSF length of heavily Sb-doped Cz silicon wafer is larger than that of heavily P-doped Cz silicon wafer under the same oxidation condition. Essentially, the OSFs are formed by the aggregation of silicon self-interstitials released at the Si/SiO 2 interface during the oxidation. Therefore, a longer OSF implies that a higher quantity of silicon self-interstitials remains after the recombination of vacancies and silicon self-interstitials in the heavily Sb-doped Cz silicon wafer. The first-principles calculations based on density functional theory (DFT) indicate that Sb atoms combine with vacancies more readily than P atoms. This is actually due to the fact that Sb has a much larger atomic size than P. In other words, as compared with P atoms, the Sb atoms are the more efficient vacancy-trapping centers, thus retarding the recombination of vacancies and silicon self-interstitials. Consequently, the silicon self-interstitials remain after recombination with the vacancies that are much more in heavily Sb-doped Cz silicon wafer than in heavily P-doped counterpart when undergoing the same oxidation. In turn, the OSFs in heavily Sb-doped silicon wafers are relatively longer.

Gettering of Fe Impurities by Bulk Stacking Faults in Czochralski-Grown Silicon

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

Electrical Activity of Frank Partial Dislocations and the Influence of Metallic Impurities in Czochralski-Grown Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Precipitation of Cu and Fe impurities on dislocations in Czochralski-grown silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

EBIC study on the electrical activity of stacking faults in silicon

Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Oxidation-Induced Stacking Faults in Nitrogen-Doped Czochralski Silicon Investigated by Transmission Electron Microscope

Internal Gettering of Copper Contamination in Czochralski Silicon

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Low Temperature Iron Gettering by Grown-in Defects in P-Type Czochralski Silicon

Effects of High Temperature Rapid Thermal Processing on the Formation of Oxidation Induced Stacking Faults in 300 Mm Nitrogen-Doped Czochralski Silicon Wafers

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Germanium in Czochralski Silicon

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Influence of metallic impurities on oxygen precipitation in Czochralski-grown silicon

Effect of Oxygen Precipitates and Induced Dislocations on Oxidation-Induced Stacking Faults in Nitrogen-Doped Czochralski Silicon