Abstract:We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Properties of Si-doped a-plane AlGaN layers

Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Carrier transport and luminescence properties of n-type GaN

Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

Improving the quality and properties of GaInSb crystal with Al doping

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiN x and GaN

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates

On compensation in Si-doped AlN