Abstract:The development of high performance wide-bandgap AlGaN channel transistors with high current densities and reduced Ohmic losses necessitates extremely highly doped, high Al content AlGaN epilayers for regrown source/drain contact regions. In this work, we demonstrate the achievement of semi-metallic conductivity in silicon (Si) doped N-polar Al0.6Ga0.4N grown on C-face 4H-SiC substrates by molecular beam epitaxy. Under optimized conditions, the AlGaN epilayer shows smooth surface morphology and a narrow photoluminescence spectral linewidth, without the presence of any secondary peaks. A favorable growth window is identified wherein the free electron concentration reaches as high as ∼1.8 × 1020 cm−3 as obtained from Hall measurements, with a high mobility of 34 cm2/V·s, leading to a room temperature resistivity of only 1 mΩ·cm. Temperature-dependent Hall measurements show that the electron concentration, mobility, and sheet resistance do not depend on temperature, clearly indicating dopant Mott transition to a semi-metallic state, wherein the activation energy (Ea) falls to 0 meV at this high value of Si doping for the AlGaN films. This achievement of semi-metallic conductivity in Si doped N-polar high Al content AlGaN is instrumental for advancing ultrawide bandgap electronic and optoelectronic devices.

Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Properties of Si-doped a-plane AlGaN layers

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Improvement in Structural and Electrical Characteristics of Nonpolar A-Plane Si-doped N-Algan

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Effects of Si-doping on Field Emission Characteristics of AlN Films Grown on N-Type 6H-Sic by MOCVD

The Difference of Si Doping Efficiency in GaN and AlGaN in GaN‐based HBT Structure

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

The Theoretical Study of Unexpected Magnetism in 2D Si-Doped AlN

Stress, Structural and Electrical Properties of Si-doped GaN Film Grown by MOCVD

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

Microstructures of Algan/Aln/Si (111) Grown by Metalorganic Chemical Vapor Deposition

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor

Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiN x and GaN

MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Design and Growth of P-Type AlGaN Graded Composition Superlattice

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Relationship Between the Growth Rate and Al Incorporation of AlGaN by Metalorganic Chemical Vapor Deposition