Abstract:In this paper, Ni/Au/Ge/Ni/Au laminated metals were deposited on the n-(Al0.27Ga0.73)(0.5)In0.5P by electron beam evaporation, the ohmic contact with low contact resistance was successfully prepared by optimized annealing process. The specific contact resistance reached 1.4 x 10(-4) Omega.cm(2) when annealed at 445 degrees C for 600 s. The result of the secondary ion mass spectrometer shows that the solid-state reaction takes place at the interface between the laminated metal Ni/Au/Ge/Ni/Au and n-AlGaInP, then the germanium atoms and indium atoms diffuse outwards due to thermal decomposition and leave vacancies in the lattice. In this paper, the reason for the formation of ohmic contact is attributed to the fact that the germanium vacancy and indium vacancy are occupied by gallium atoms as donors to increasing the N-type doping concentration. The optimized annealing process can improve the ohmic contact performance of n-(Al0.27Ga0.73)(0.5)In0.5P with low doping concentration, but the specific contact resistivity has no obvious relationship with the annealing process when the of doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P increased. The Schottky barrier is high at low doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P. So inter diffusion in the annealing process could significantly increase the doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P and reduce the Schottky barrier height. Nevertheless, the Schottky barrier of the sample with high doping concentration is low enough what is not sensitive with inter diffusion. It provides a new method for the preparation of N-electrode of AlGaInP thin film light-emitting-diodes chip, as so as avoid the problem of n(+)-GaAs absorption in the conventional N-electrode preparation method and the problem of electrode dropping. However, there are still some shortcomings in this paper. The disadvantage is that the high doping concentration of n-AlGaInP will affect the crystal quality, which will reduce the luminous efficiency of LED. Therefore, in order to prepare ohmic contact with excellent properties on n-AlGaInP with lower doping concentration, optimizing the electrode design and the surface treatment of semiconductor materials are the keys to follow-up research.

Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiN x and GaN

Improvement of P-Type Ohmic Contact of GaN Laser Diodes by Using Delta-Doped P-Gan Contact Layer

Ultra-Low Resistance Ohmic Contacts to Gan with High Si Doping Concentrations Grown by Molecular Beam Epitaxy

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

The Difference of Si Doping Efficiency in GaN and AlGaN in GaN‐based HBT Structure

Properties of Si-doped a-plane AlGaN layers

Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP

Low Specific Contact Resistivity of 10−3ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate

Study on Electrical Properties of N-Gan Grown at Low Temperature by Metal-Organic Vapor Phase Epitaxy

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Improvement in Structural and Electrical Characteristics of Nonpolar A-Plane Si-doped N-Algan

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Effect of AlN/GaN supercycle ratio on properties of Al x Ga 1−x N films using super-cycle plasma enhanced atomic layer deposition

Growth and Characterization of AlGaN/GaN Heterostructure Using Unintentionally Doped AlN/GaN Superlattices As Barrier Layer

Low-resistance Ohmic Contact on Polarization-Doped AlGaN/GaN Heterojunction

Influence of Al Content on Electrical and Structural Properties of Si-Doped Alxga1-Xn/Gan Hemt Structures