Abstract:Metalorganic chemical vapour deposition and molecular beam epitaxy have already been demonstrated to be successful techniques for obtaining high-quality epitaxial GaN layers with low impurity concentrations and pretty good electrical properties. However, high growth temperature employed in both of these methods give rise to some intrinsic defects of the thin films, such as high background-carrier concentrations. As a low-temperature thin film deposition method, plasma-enhanced atomic layer deposition (PE-ALD) has more unique advantages compared to both methods for epitaxial growth of GaN. In this paper, the polycrystalline GaN thin films were fabricated on Si (100) substrates at 150-300 degrees C by PE-ALD. Trimethylgallium and N-2/H-2 plasma gas mixture were used as the Ga and N precursors. The growth rate of the thin films was demonstrated by the spectroscopic ellipsometer. The crystal structrue and composition of the GaN thin films were characterized by X-ray diffractometer and X-ray photoelectron spectrometer (XPS). It is showed that the growth window for PE-ALD grown GaN thin films is 210-270 degrees C, where the growth rate remains constant at 0.70 angstrom/cycle. And it is known that it is the self-limiting nature of PE-ALD that is ascribed to the plateau of the growth rate. Films grown at relatively higher temperature are polycrystalline with a hexagonal wurtzite structure, while films grown under relatively lower temperature are amorphous. The grazing incidence X-ray diffraction (GIXRD) patterns of the polycrystalline thin films reveal three main peaks located at 2 theta = 3 2.4 degrees, 34.6 degrees and 36.9 degrees, which are corresponding to the (100), (002) and (101) reflections. It is showed that the Ga, N atoms would get higher energy for more effective migration to positions with lowest energy to form ordered crystalline arrange at higher growth temperature. The XPS results show that all the N elements of the as-grown thin films are in the form of N-Ga bond, indicating that all the N elements are formed into GaN thin films; and there is a little amount of the Ga elements that exist in Ga-O bond. The fact that there is no Ga2O3-related peaks in the GIXRD pattern suggests that there is small amount of amorphous Ga2O3 dispersed in the polycrystalline GaN thin films. In the future work, reducing the concentration of the C and O impurities may be achieved by increasing the time of the reaction and plasma pules in the process formula and replacing the inductively coupled plasma with the hollow cathode plasma, respectively.

Study on Electrical Properties of N-Gan Grown at Low Temperature by Metal-Organic Vapor Phase Epitaxy

Effect of Growth Temperature on the Impurity Incorporation and Material Properties of N-Polar Gan Films Grown by Metal-Organic Chemical Vapor Deposition

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Influence of Carrier Gas H 2 Flow Rate on Quality of P-Type GaN Epilayer Grown and Annealed at Lower Temperatures

The residual C concentration control for low temperature growth p-type GaN*

Properties Comparison of GaN Epilayers Deposited under Different Growth Temperatures

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Ro Om-Temp Erature Thermo Electric Prop Erties of GaN Thin Films Grown by Metal Organic Chemical Vap or Dep Osition

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition

Low Temperature Homoepitaxy Of (010) $β$-Ga$_2$O$_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition

Model for Low-Temperature Growth of Gallium Nitride

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

The Effect of Low Temperature GaAs Nucleation on the Growth of GaN on Silicon (001) During MOVPE Process

Gan Grown on Ain/Sapphire Templates

Different Annealing Temperature Suitable for Different Mg Doped P-Gan

P-Type Gan Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy

Si Implantation in GaN at Elevated Temperatures

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates