Abstract:GaN-based light-emitting diodes provide higher performance in the short-wavelength part of the visible and ultraviolet spectrum than any other material system. However, there is still a great need for improvement of the extraction efficiency. Because many parts of emitting light of LED suffer absorption of the metal contacts and bond pads, also by active layer. So the employment of highly reflective metal ohmic contacts with a low contact resistance could substantially improve the GaN extraction efficiency of GaN-based LED, especially for vertical structure LED fabricated by laser lift-off process, which have more light output surface and high thermal conductivity than normal structure LED. The high reflectivity of omni-direction reflector is reported, that is, incorporation of Ag and Al onto the contact layers acting as a reflecting layer. Firstly, the reflectivity of the layers Ti/Ag, Al, Ni/Au/Ti/Ag and Ni/Au/Al were calculated through the theory of optical films. Then the reflectivity and contact characteristic of the GaN-based LED samples with these multi-layers on p-type GaN were measured. The result showed high omni-directional reflectors can be achieved over Ag-based films structure, and Al-based also, but the Ag-based films can provide higher reflectivity of 80%, which is better than that of Al-based film. The current-voltage curves showed low resistance on these contact layers except the Al direct on p-GaN. And the resistance of Ni/Au/Ti/Ag and Ni/Au/Al just depends on the annealed Ni/Au layers. Here the Ni/Au layers not only supply the ohmic contact but also the spreading the current. The conglomerate and oxidation of Ag film under high temperature are eliminated by introducing other Ni/Au cladding layers. Because the thickness of Ag is enough for high reflectivity so the additional layers after Ag also have no effect on the reflectivity. The good stability, low resistance and high reflectivity were obtained by two-step annealing methods. Then we applied the multi-layer Ni/Au/Ti/Ag/NiAu to vertical structure light emitting diodes (LED) by laser lift-off technology. The light output efficiency was improved significantly. The vertical structure LED with high reflective contact layer was fabricated successfully.

Improvement of P-Type Ohmic Contact of GaN Laser Diodes by Using Delta-Doped P-Gan Contact Layer

Study on the p-type ohmic contact in GaAs-based laser diode

Improvement of Properties of P-Gan by Mg Delta Doping

Ohmic Contacts in GaN-based Devices

Effects of Thin Heavily Mg-Doped Gan Capping Layer on Ohmic Contact Formation of P-Type Gan

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiN x and GaN

Improvement of Characteristics of InGaN-based Laser Diodes with Undoped InGaN Upper Waveguide Layer

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Optimization of the Electron Blocking Layer in GaN Laser Diodes

The Dichotomous Role of Oxygen in the Ohmic Contact Formation on P-Type GaN Grown by MBE and MOCVD

Influence of A Deep-Level-Defect Band Formed in A Heavily Mg-Doped Gan Contact Layer on the Ni/Au Contact to P-Gan

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes

The Effect of N-polar GaN Domains As Ohmic Contacts

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact with Laser Annealing

A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Ohmic Contact of High Reflectivity on P-Type GaN

Pd/In/Ni/Au Contact to N-Polar N-Type Gan Fabricated by Laser Lift-Off

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations