Electronic structures and physical properties of Mg, C, and S doped g-GaN
Pengfei Shen,Enling Li,Lin Zhang,Hongyuan Zhao,Zhen Cui,Deming Ma
DOI: https://doi.org/10.1016/j.spmi.2021.106930
IF: 3.22
2021-08-01
Superlattices and Microstructures
Abstract:<p>Doping can provide hole and electron carriers into g-GaN materials to enhance conductivity and improve photoemission performance of g-GaN-based devices. In this work, we propose 9×9×1 g-GaN supercell and C, Mg, and S doped g-GaN systems (C and Mg substituting for Ga (C<sub>Ga</sub> and Mg<sub>Ga</sub> systems), C and S substituting for N (C<sub>N</sub> and S<sub>N</sub> systems)) with different concentrations, and investigate their structural, electronic, electrical, and optical properties in the framework of first-principles calculations. <em>N</em>-type doping is achieved in the C<sub>Ga</sub> and S<sub>N</sub> g-GaN systems, and <em>p</em>-type doping is achieved in the Mg<sub>Ga</sub> and C<sub>N</sub> g-GaN systems. C substituting for Ga is easier than C substituting for N, and the C<sub>Ga</sub> g-GaN systems are more stability than the C<sub>N</sub> g-GaN systems. At the ultraviolet of the absorption spectra, the peaks of the doped g-GaN systems blue-shift or red-shift relative to the intrinsic g-GaN, and there are sharp peaks of the doped C<sub>Ga</sub> and S<sub>N</sub> g-GaN systems at visible range. The work function and the carrier mobility have been modulated by doping and the electrical properties of g-GaN can be tuned effectively, which also promising significant applications in the design of 2D microelectronic devices and the integrated circuit.</p>
physics, condensed matter