Access Cost Estimation for Physical Database Design

P. Ciaccia,D. Maio

DOI: https://doi.org/10.1016/0169-023X(93)90002-7

IF: 1.5

1993-10-01

Data & Knowledge Engineering

Abstract:

What problem does this paper attempt to address?

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Qingjun Xu,Shiying Zhang,Bin Liu,Tao,Zili Xie,Xiangqian Xiu,Dunjun Chen,Peng Chen,Ping Han,Youdou Zheng,Rong Zhang

DOI: https://doi.org/10.1016/j.spmi.2018.04.053

IF: 3.22

2018-01-01

Superlattices and Microstructures

Abstract:Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration similar to 10(20) cm(-3). For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 x 10(18) cm(-3) and 0.56 cm(2)/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys. (C) 2018 Elsevier Ltd. All rights reserved.
Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

Lynda Amichi,Isabelle Mouton,Enrico Di Russo,Victor Boureau,Frédéric Barbier,Amélie Dussaigne,Adeline Grenier,Pierre-Henri Jouneau,Catherine Bougerol,David Cooper

DOI: https://doi.org/10.1063/1.5125188

IF: 2.877

2020-02-14

Journal of Applied Physics

Abstract:The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formation of Mg-rich clusters. This is associated with the formation of pyramidal inversion domains (PIDs). The direct measurement of the doping concentration outside the clusters provided by APT suggests a saturation in the p-type electrical activity for Mg concentrations above 7 × 1019 cm−3. Maps of the electrostatic potential provided by off-axis electron holography confirm that the highest carrier concentration was achieved in the regions with the highest dopant concentration of 2 × 1020 cm−3, despite the presence of a high density of Mg-rich clusters revealed by APT. The correlation of these techniques suggests that PIDs are not the major cause of the reduction in electrostatic potential.

physics, applied
Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Xiaomin Zhang,Yanjie Wang,Ziwen Yang,Hui Liu,Weihua Chen,Li Ding,Rui Li,Yang Zhi‐Jian,Guoyi Zhang,Hu Xiaodong

2008-01-01

Journal of Semiconductors

Abstract:p-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through optimization of the magnesium flow rate.The hole concentration first increased and then decreased with the magnesium flow rate while the mobility decreased monotonously.The optimum sample reached a hole concentration of 4.1E17cm-3 and a resistivity of 1Ω·cm.Based on a self-compensation model involving the deep donor MGaVN,we calculate the hole concentration as a function of magnesium doping concentration NA,which indicates that the self-compensation coefficient increases with NA;the hole concentration first increases with NA and reaches a maximum at NA≈4E19,then decreases rapidly as doping concentration increases.XRD also indicate that dislocation density decreased as magnesium flow rate decreased.
Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Kai Chen,Jianguo Zhao,Yu Ding,Wenxiao Hu,Bin Liu,Tao,Zhe Zhuang,Yu Yan,Zili Xie,Jianhua Chang,Rong Zhang,Youliao Zheng

DOI: https://doi.org/10.1088/1674-1056/acdc0b

2024-01-01

Chinese Physics B

Abstract:Nonpolar (11-20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal-organic chemical vapor deposition (MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3 x 10(18) cm(-3), a high Mg activation efficiency of 6.5%, an activation energy of 114 meV for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990 degree celsius. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.
Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Qing-Jun Xu,Shi-Ying Zhang,Bin Liu,Zhen-Hua Li,Tao Tao,Zi-Li Xie,Xiang-Qian Xiu,Dun-Jun Chen,Peng Chen,Ping Han,Ke Wang,Rong Zhang,You-Dou Zheng

DOI: https://doi.org/10.1088/1674-1056/ab7e93

2020-01-01

Chinese Physics B

Abstract:The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration (similar to 10(20) cm(-3)) grown by metal-organic chemical vapor deposition (MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and (V-III complex)(1-) as well as V-N(3+) and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mgdoped AlxGa1-xN (x = 0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2 x 10(18) cm(-3) and 3.3 x 10(17) cm(-3), respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors' concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature.
Increasing Hole Concentration of P-Type GaN by Mg Implantation

YANG Zhijian,LONG Tao,ZHANG Guoyi

DOI: https://doi.org/10.3321/j.issn:1000-7032.2001.z1.003

2001-01-01

Chinese Journal of Luminescence

Abstract:The first investigation on the effect of Mg implantation on Mg-doped GaN grown by MOCVD was reported. P-type GaN with high hole concentration (8.28 × 1017 cm- 3 ) was obtained by annealing at 800℃ for 1h. This method can be used to fabricate the GaN-based devices for low resistance ohmic contact of p-type GaN.
Improvement of Properties of P-Gan by Mg Delta Doping

YB Pan,ZJ Yang,Y Lu,M Lu,CY Hu,TJ Yu,XD Hu,GY Zhang

DOI: https://doi.org/10.1088/0256-307x/21/10/042

2004-01-01

Chinese Physics Letters

Abstract:The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition. The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.
Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Lian Zhang,Rong Wang,Zhe Liu,Zhe Cheng,Xiaodong Tong,Jianxing Xu,Shiyong Zhang,Yun Zhang,Fengxiang Chen

DOI: https://doi.org/10.3390/ma14185339

IF: 3.4

2021-09-16

Materials

Abstract:This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

s r jeon,zhipeng ren,guohong cui,jun su,m gherasimova,junwei han,hyung koun cho,li zhou

DOI: https://doi.org/10.1063/1.1867565

IF: 4

2005-01-01

Applied Physics Letters

Abstract:A study of Mg doping of AlxGa1-xN up to x similar to 50% using microstructural and electrical probes is reported. The viability of effective p-type doping is defined by a minimum concentration of Mg required to offset the background impurities and, more importantly, a maximum limit above which inversion domains and structural defects start to nucleate, accompanied by a rapid degradation of electrical transport. Resistivity of 10 Omega cm and free hole concentrations above 10(17) cm(-3) are achieved for AlxGa1-xN up to x similar to 50% within an optimum window of Mg incorporation. (c) 2005 American Institute of Physics.
Doping and compensation in heavily Mg doped Al-rich AlGaN films

Pegah Bagheri,Andrew Klump,Shun Washiyama,M. Hayden Breckenridge,Ji Hyun Kim,Yan Guan,Dolar Khachariya,Cristyan Quiñones-García,Biplab Sarkar,Shashwat Rathkanthiwar,Pramod Reddy,Seiji Mita,Ronny Kirste,Ramón Collazo,Zlatko Sitar

DOI: https://doi.org/10.1063/5.0082992

IF: 4

2022-02-21

Applied Physics Letters

Abstract:Record low resistivities of 10 and 30 Ω cm and room-temperature free hole concentrations as high as 3 × 10 18 cm −3 were achieved in bulk doping of Mg in Al 0.6 Ga 0.4 N films grown on AlN single crystalline wafer and sapphire. The highly conductive films exhibited a low ionization energy of 50 meV and impurity band conduction. Both high Mg concentration (>2 × 10 19 cm −3 ) and low compensation were required to achieve impurity band conduction and high p-type conductivity. The formation of V N -related compensators was actively suppressed by chemical potential control during the deposition process. This work overcomes previous limitations in p-type aluminum gallium nitride (p-AlGaN) and offers a technologically viable solution to high p-conductivity in AlGaN and AlN.

physics, applied
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD

Anelia Kakanakova-Georgieva,Alexis Papamichail,Vallery Stanishev,Vanya Darakchieva

DOI: https://doi.org/10.1002/pssb.202200137

2022-05-23

Abstract:Metalorganic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] $\sim2 \times 10^{19}$ cm$^{-3}$ has been performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, have been maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers has been certified by a room-temperature hole concentration of $p\sim2 \times 10^{17}$ cm$^{-3}$ in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can co-exist with a dominant and evidently electrically active isolated MgGa acceptor.

Applied Physics
Growth and Properties of Mg-doped In-polar InN Films

Xinqiang Wang,Song-Bek Che,Yoshihiro Ishitani,Akihiko Yoshikawa

DOI: https://doi.org/10.1063/1.2741124

IF: 4

2007-01-01

Applied Physics Letters

Abstract:Mg doping into In-polar InN layers for different Mg fluxes is performed on GaN templates by molecular beam epitaxy, and their electrical and optical properties are investigated. Mg concentration is linearly proportional to Mg-beam flux, indicating that the Mg-sticking coefficient is almost unity. With Mg doping, electron concentration decreases by the effect of carrier compensation, but it begins to increase with further increasing Mg flux because of Mg-related donorlike-defects formation. For the partially carrier-compensated Mg-doped InN, two photoluminescence peaks are observed; one is originated from free-to-acceptor emission with an acceptor activation energy of about 61meV and the other is similar to the conventional band-to-band emission.
(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Mark S. Goorsky,Michael Evan Liao,Kenny Huynh,Yekan Wang,James Tweedie,Zlatko Sitar,Ramon Collazo,Kacper Sierakowski,Michal Bockowski,Xianrong Huang

DOI: https://doi.org/10.1149/ma2023-02351691mtgabs

2023-12-22

ECS Meeting Abstracts

Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.
The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

Ehsan Vadiee,Evan A. Clinton,Joe V. Carpenter,Heather McFavilen,Chantal Arena,Zachary C. Holman,Christiana B. Honsberg,W. Alan Doolittle

DOI: https://doi.org/10.1063/1.5112498

IF: 2.877

2019-08-28

Journal of Applied Physics

Abstract:GaN p++/n++ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 1020 cm−3 shows NDR at ∼1.8 V and a large current density of 3.4 KA/cm2 at −1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition, the effect of Mg delta doping at the junction was investigated for the first time showing a dramatic improvement in the tunneling characteristics. A metal-organic chemical vapor deposition (MOCVD) grown InGaN light-emitting diode (LED) with an MBE grown GaN homojunction tunnel contact to the MOCVD grown p-GaN layer shows superior lateral conductivity and improved luminescence uniformity, but suffers an added voltage penalty, assumed to be due to interface impurities, compared to control LED with indium-tin-oxide.

physics, applied
Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Katarzyna Gas,Gerd Kunert,Piotr Dluzewski,Rafal Jakiela,Detlef Hommel,Maciej Sawicki

DOI: https://doi.org/10.1016/j.jallcom.2021.159119

2021-02-07

Abstract:Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-doping by holes from the cladding layers can alter the spin-spin interaction in (Ga,Mn)N. The four investigated structures, differing with the Mg doping level, are carefully characterized at the nanoscale by HRTEM, EDX, and by SIMS. HRTEM decisively excluded a presence of foreign Mn-rich phases. The structures, up to medium Mg doping, show no Mg over-doping effects. Magnetic studies of these structures are aided by the employment of a dedicated experimental approach of the in situ compensation of the magnetic contribution from the substrate, allowing up to about fifty-fold reduction of this contribution. This technique, dedicated to these structures, simultaneously provides a tenfold reduction of temporal instabilities of the magnetometric unit and lowers the experimental jitter to merely $5 \times 10^{-7}$~emu at 70~kOe, vastly increasing the precision and the credibility of the results of the standard integral SQUID magnetometry in high magnetic fields. The magnetic characteristics of the trilayers structures established here prove identical with the already known properties of the thick (Ga,Mn)N single layers, namely (i) the low temperature ferromagnetism among Mn$^{3+}$ ions driven by superexchange and (ii) purely paramagnetic response at higher temperatures. The possible cause of the lack of any effects brought about by the adjacent Mg-doping is a presence of residual Mn in the cladding layers, resulting in the deactivation of the p-type doping intended there. This finding points out that a more intensive technological effort has to be exerted to promote the co-doping-driven carrier-mediated ferromagnetic coupling in Mn-enriched GaN, especially at elevated temperatures.

Materials Science
Highly resistive epitaxial Mg-doped GdN thin films

C.-M. Lee,H. Warring,S. Vézian,B. Damilano,S. Granville,M. Al Khalfioui,Y. Cordier,H.J. Trodahl,B.J. Ruck,F. Natali

DOI: https://doi.org/10.1063/1.4905598

2014-10-30

Abstract:We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 {\Omega}.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].

Materials Science,Strongly Correlated Electrons
Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Marcin Zajac,Paweł Kaminski,Roman Kozlowski,Elzbieta Litwin-Staszewska,Ryszard Piotrzkowski,Karolina Grabianska,Robert Kucharski,Rafal Jakiela

DOI: https://doi.org/10.3390/ma17051160

IF: 3.4

2024-03-02

Materials

Abstract:The formation of intrinsic point defects in the N-sublattice of semi-insulating Mg-doped GaN crystals grown by the ammonothermal method (SI AT GaN:Mg) was investigated for the first time. The grown-in defects produced by the displacement of nitrogen atoms were experimentally observed as deep traps revealed by the Laplace transform photoinduced transient spectroscopy in the compensated p-type crystals with the Mg concentrations of 6 × 1018 and 2 × 1019 cm−3 and resistivities of ~1011 Ωcm and ~106 Ωcm, respectively. In both kinds of materials, three closely located traps with activation energies of 430, 450, and 460 meV were revealed. The traps, whose concentrations in the stronger-doped material were found to be significantly higher, are assigned to the (3+/+) and (2+/+) transition levels of nitrogen vacancies as well as to the (2+/+) level of nitrogen split interstitials, respectively. In the material with the lower Mg concentration, a middle-gap trap with the activation energy of 1870 meV was found to be predominant. The results are confirmed and quantitatively described by temperature-dependent Hall effect measurements. The mechanism of nitrogen atom displacement due to the local strain field arising in SI AT GaN:Mg is proposed and the effect of the Mg concentration on the charge compensation is discussed.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Observation of 2D-magnesium-intercalated gallium nitride superlattices

Jia Wang,Wentao Cai,Weifang Lu,Shun Lu,Emi Kano,Verdad C. Agulto,Biplab Sarkar,Hirotaka Watanabe,Nobuyuki Ikarashi,Toshiyuki Iwamoto,Makoto Nakajima,Yoshio Honda,Hiroshi Amano

DOI: https://doi.org/10.1038/s41586-024-07513-x

IF: 64.8

2024-06-06

Nature

Abstract:Since the demonstration of p-type gallium nitride (GaN) through doping with substitutional magnesium (Mg) atoms 1,2 , rapid and comprehensive developments, such as blue light-emitting diodes, have considerably shaped our modern lives and contributed to a more carbon-neutral society 3,4,5 . However, the details of the interplay between GaN and Mg have remained largely unknown 6,7,8,9,10,11 . Here we observe that Mg-intercalated GaN superlattices can form spontaneously by annealing a metallic Mg film on GaN at atmospheric pressure. To our knowledge, this marks the first instance of a two-dimensional metal intercalated into a bulk semiconductor, with each Mg monolayer being intricately inserted between several monolayers of hexagonal GaN. Characterized as an interstitial intercalation, this process induces substantial uniaxial compressive strain perpendicular to the interstitial layers. Consequently, the GaN layers in the Mg-intercalated GaN superlattices exhibit an exceptional elastic strain exceeding −10% (equivalent to a stress of more than 20 GPa), among the highest recorded for thin-film materials 12 . The strain alters the electronic band structure and greatly enhances hole transport along the compression direction. Furthermore, the Mg sheets induce a unique periodic transition in GaN polarity, generating polarization-field-induced net charges. These characteristics offer fresh insights into semiconductor doping and conductivity enhancement, as well as into elastic strain engineering of nanomaterials and metal–semiconductor superlattices 13 .

multidisciplinary sciences
Mg incorporation induced microstructural evolution of reactively sputtered GaN epitaxial films to Mg-doped GaN nanorods

Mohammad Monish,Syed S Major

DOI: https://doi.org/10.1088/1361-6528/ad2ac6

IF: 3.5

2024-02-21

Nanotechnology

Abstract:Mg-doped GaN films/nanorods were grown epitaxially on c-sapphire by reactive co-sputtering of GaAs and Mg at different N2 percentages in Ar-N2 sputtering atmosphere. Energy dispersive x-ray spectroscopy revealed that the Mg incorporation increases with increase of Mg area coverage of GaAs target, but does not depend on N2 percentage. In comparison to undoped GaN films, Mg-doped GaN displayed substantial decrease of lateral conductivity and electron concentration with the initial incorporation of Mg, indicating p-type doping, but revealed insulating behaviour at larger Mg content. Morphological investigations by scanning electron microscopy have shown that the films grown with 2% - 4% Mg area coverages displayed substantially improved columnar structure, compared to undoped GaN films, along with rough and voided surface features at lower N2 percentages. With increase of Mg area coverage to 6%, the growth of vertically aligned and well-separated nanorods, terminating with smooth hexagonal faces was observed in the range of 50% - 75% N2 in sputtering atmosphere. High-resolution x-ray diffraction studies confirmed the epitaxial character of Mg-doped GaN films and nanorods, which displayed complete c-axis orientation of crystallites and a mosaic structure, aligned laterally with the c-sapphire lattice. The catalyst-free growth of self-assembled Mg-doped GaN nanorods is attributed to increase of surface energy anisotropy due to the incorporation of Mg. However, with further increase of Mg area coverage to 8%, the nanorods revealed lateral merger, suggesting enhanced radial growth at larger Mg content.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

M. Hayden Breckenridge,James Tweedie,Pramod Reddy,Yan Guan,Pegah Bagheri,Dennis Szymanski,Seiji Mita,Kacper Sierakowski,Michał Boćkowski,Ramon Collazo,Zlatko Sitar

DOI: https://doi.org/10.1063/5.0038628

IF: 4

2021-01-11

Applied Physics Letters

Abstract:We demonstrate high p-type conductivity and hole concentrations >1018 cm−3 in Mg-implanted GaN. The implantation was performed at room temperature and by post-implantation annealing at 1 GPa of N2 and in a temperature range of 1200–1400 °C. The high pressure thermodynamically stabilized the GaN surface without the need of a capping layer. We introduce a "diffusion budget," related to the diffusion length, as a convenient engineering parameter for comparing samples annealed at different temperatures and for different times. Although damage recovery, as measured by XRD, was achieved at relatively low diffusion budgets, these samples did not show p-type conductivity. Further analyses showed heavy compensation by the implantation-induced defects. Higher diffusion budgets resulted in a low Mg ionization energy (∼115 meV) and almost complete Mg activation. For even higher diffusion budgets, we observed significant loss of Mg to the surface and a commensurate reduction in the hole conductivity. High compensation at low diffusion budgets and loss of Mg at high diffusion budgets present a unique challenge for shallow implants. A direct control of the formation of compensating defects arising from the implantation damage may be necessary to achieve both hole conductivity and low Mg diffusion.

physics, applied

Access Cost Estimation for Physical Database Design

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Increasing Hole Concentration of P-Type GaN by Mg Implantation

Improvement of Properties of P-Gan by Mg Delta Doping

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD

Growth and Properties of Mg-doped In-polar InN Films

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Highly resistive epitaxial Mg-doped GdN thin films

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Mg incorporation induced microstructural evolution of reactively sputtered GaN epitaxial films to Mg-doped GaN nanorods

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing