Abstract:Nominally 45 nm GaN:Mg/ 5 nm (Ga,Mn)N / 45 nm GaN:Mg trilayers structures prepared by molecular beam epitaxy on GaN-buffered Al2O3 substrates are investigated to verify whether the indirect co-doping by holes from the cladding layers can alter the spin-spin interaction in (Ga,Mn)N. The four investigated structures, differing with the Mg doping level, are carefully characterized at the nanoscale by HRTEM, EDX, and by SIMS. HRTEM decisively excluded a presence of foreign Mn-rich phases. The structures, up to medium Mg doping, show no Mg over-doping effects. Magnetic studies of these structures are aided by the employment of a dedicated experimental approach of the in situ compensation of the magnetic contribution from the substrate, allowing up to about fifty-fold reduction of this contribution. This technique, dedicated to these structures, simultaneously provides a tenfold reduction of temporal instabilities of the magnetometric unit and lowers the experimental jitter to merely $5 \times 10^{-7}$~emu at 70~kOe, vastly increasing the precision and the credibility of the results of the standard integral SQUID magnetometry in high magnetic fields. The magnetic characteristics of the trilayers structures established here prove identical with the already known properties of the thick (Ga,Mn)N single layers, namely (i) the low temperature ferromagnetism among Mn$^{3+}$ ions driven by superexchange and (ii) purely paramagnetic response at higher temperatures. The possible cause of the lack of any effects brought about by the adjacent Mg-doping is a presence of residual Mn in the cladding layers, resulting in the deactivation of the p-type doping intended there. This finding points out that a more intensive technological effort has to be exerted to promote the co-doping-driven carrier-mediated ferromagnetic coupling in Mn-enriched GaN, especially at elevated temperatures.

Highly resistive epitaxial Mg-doped GdN thin films

X-ray reciprocal space mapping analysis of ferromagnetic GdN films grown by pulsed laser epitaxy

Study of the heavily p-type doping of cubic GaN with Mg

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Growth and Properties of Mg-doped In-polar InN Films

Mg incorporation induced microstructural evolution of reactively sputtered GaN epitaxial films to Mg-doped GaN nanorods

Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Properties of Mg-Doped AlGaN Films

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

The Effects of Substrate Temperature on the Growth, Microstructural and Magnetic Properties of Gadolinium-Containing Films on Aluminum Nitride

Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

High p Doped and Robust band structure in Mg-doped Hexagonal Boron Nitride

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Structural and paramagnetic properties of dilute Ga1-xMnxN

The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film

Polarity Inversion in High Mg-Doped In-Polar Inn Epitaxial Layers

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN