Abstract:Abstract Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 × 10 18 cm −3 is thus realized at room temperature, which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path, as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly, benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach, vertical miniband transport of holes is verified in the p-AlGaN superlattices, greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices, which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency, thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

High conductivity and low activation energy in p-type AlGaN

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Effects of Cp 2 Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Effects of V/III ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Effects of Ⅴ/Ⅲ Ratio and Cp2Mg Flow Rate on Characteristics of Non-Polar A-Plane Mg-delta-doped P-Algan Epi-Layer

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Properties of Mg-Doped AlGaN Films

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

Improvement of Properties of P-Gan by Mg Delta Doping