Abstract:Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $\beta$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

High conductivity and low activation energy in p-type AlGaN

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Progress on N‐type Doping of AlGaN Alloys on AlN Single Crystal Substrates for UV Optoelectronic Applications

Conductivity Enhancement in AlGaN:Mg by Suppressing the Incorporation of Carbon Impurity

Design and Growth of Low Resistivity P-Type AlGaN Superlattice Structure

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping

Realization of P-Type Conduction in Compositionally Graded Quaternary AlInGaN

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Electron Mobility in Polarization-Doped Al0-0.2GaN with a Low Concentration Near 1017 Cm−3