Abstract:Epitaxial regrowth processes for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts are reported. The combination of low‐leakage, large positive threshold p‐gates, and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors. Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al0.85Ga0.15N barrier/Al0.50Ga0.50N channel HEMT with a large positive threshold voltage (VTH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10−6 Ω cm2, average = 1.8 × 10−4 Ω cm2) are demonstrated in an Al0.85Ga0.15N barrier/Al0.68Ga0.32N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment

First demonstration of Aluminum gallium nitride (AlGaN) - Gallium nitride (GaN) superlattice (SL) based p-channel field effect transistor

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

High On/off Ratio P-Type Field-Effect Transistor Enabled by a Single Heavily Al-doped Α-Si3n4 Nanowire

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

High conductivity and low activation energy in p-type AlGaN

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs with $f_{t}$ of 275 GHz

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping