Abstract:Epitaxial regrowth processes for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts are reported. The combination of low‐leakage, large positive threshold p‐gates, and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors. Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al0.85Ga0.15N barrier/Al0.50Ga0.50N channel HEMT with a large positive threshold voltage (VTH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10−6 Ω cm2, average = 1.8 × 10−4 Ω cm2) are demonstrated in an Al0.85Ga0.15N barrier/Al0.68Ga0.32N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

First demonstration of Aluminum gallium nitride (AlGaN) - Gallium nitride (GaN) superlattice (SL) based p-channel field effect transistor

AlGaN/GaN heterojunction bipolar transistor

AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Demonstration of Undoped Quaternary AlInGaN∕GaN Heterostructure Field-Effect Transistor on Sapphire Substrate

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

First Demonstration of an N-Polar InAlGaN/GaN HEMT

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Thermal engineering increases current density in AlGaN/GaN superlattice devices

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With of 275 GHz