Abstract:Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices.

AlGaN/GaN heterojunction bipolar transistor

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

AlGaN/GaN Heterojunction Bipolar Transistor with Selective-Area Grown Emitter and Improved Base Contact

GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applications

AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance

First Demonstration of an N-Polar InAlGaN/GaN HEMT

Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts

GaN HBT: toward an RF device

First demonstration of Aluminum gallium nitride (AlGaN) - Gallium nitride (GaN) superlattice (SL) based p-channel field effect transistor

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

High reliability InGaP/GaAs HBT

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Planar, Al0.3Ga0.7As-passivated-base, heterojunction bipolar phototransistors