Abstract:Epitaxial regrowth processes for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts are reported. The combination of low‐leakage, large positive threshold p‐gates, and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors. Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al0.85Ga0.15N barrier/Al0.50Ga0.50N channel HEMT with a large positive threshold voltage (VTH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10−6 Ω cm2, average = 1.8 × 10−4 Ω cm2) are demonstrated in an Al0.85Ga0.15N barrier/Al0.68Ga0.32N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

AlGaN/GaN heterojunction bipolar transistor

Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density

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AlGaN/GaN Heterojunction Bipolar Transistor with Selective-Area Grown Emitter and Improved Base Contact

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

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AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance

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GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

A Silicon Heterojunction Bipolar Transistor with an Amorphous Silicon Emitter and a Crystalline Silicon Emitter Region

Algan/Gan Hemts On Si By Mbe With Regrown Contacts And F(T)=153 Ghz

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

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Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer