Abstract:Epitaxial regrowth processes for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts are reported. The combination of low‐leakage, large positive threshold p‐gates, and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors. Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al0.85Ga0.15N barrier/Al0.50Ga0.50N channel HEMT with a large positive threshold voltage (VTH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10−6 Ω cm2, average = 1.8 × 10−4 Ω cm2) are demonstrated in an Al0.85Ga0.15N barrier/Al0.68Ga0.32N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

AlGaN/GaN Heterojunction Bipolar Transistor with Selective-Area Grown Emitter and Improved Base Contact

AlGaN/GaN heterojunction bipolar transistor

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts

Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts

Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density

GaN HBT: toward an RF device

Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

High reliability InGaP/GaAs HBT

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Demonstration of AlGaN/GaN HEMTs on Vicinal Sapphire Substrates with Large Misoriented Angles

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance