Abstract:In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 \Omega / \Box ) is reported. Optimization of growth conditions, such as reduced growth rate, low carbon incorporation, and thickness optimization of different epitaxial layers allowed to grow a crack-free high composition and thick AlGaN barrier layer HEMT structure. A significantly high two-dimensional electron gas (2DEG) density of 1.46 \times 10^{13} cm^{-2} with a room temperature mobility of 1710 cm^{2}/V.s is obtained by Hall measurement using the Van-Der-Pauw method. These state-of-the-art results show great potential for high-power Ga-polar HEMT design on the sapphire substrate.

What problem does this paper attempt to address?

The main issues this paper attempts to address are: 1. **Crack-free growth of high aluminum content (>35%) thick barrier layer (>30 nm) AlGaN/AlN/GaN high electron mobility transistors (HEMTs)**: - When growing AlGaN/AlN/GaN HEMT structures with high aluminum content and thick barrier layers on sapphire substrates, cracks are easily generated due to the lattice mismatch (3.5%) between AlN and GaN. This limits the deposition of high aluminum content and thick barrier layers. - Cracks not only affect the performance of the device but also lead to device failure. 2. **Achieving low sheet resistance (<250 Ω/□)**: - Low sheet resistance is crucial for improving the power performance of HEMTs. However, it is very difficult to achieve low sheet resistance in AlGaN/GaN HEMT structures grown on sapphire substrates due to the high defect and dislocation density caused by lattice mismatch. - Most high-performance AlGaN/GaN HEMTs have a sheet resistance close to 250 Ω/□ at room temperature, but these devices are mostly fabricated on more expensive SiC substrates. 3. **Balancing high two-dimensional electron gas (2DEG) density and high electron mobility**: - A thick barrier layer can increase the 2DEG density, thereby reducing the sheet resistance. However, as the barrier layer thickness increases, alloy scattering and interface roughness scattering also increase, leading to a decrease in electron mobility. - Therefore, achieving high electron mobility while maintaining high 2DEG density is a challenge. By optimizing growth conditions and adjusting the thickness of different epitaxial layers, the authors successfully fabricated a crack-free, high aluminum content (36%), thick barrier layer (31 nm) AlGaN/AlN/GaN HEMT structure on a sapphire substrate, achieving a sheet resistance as low as 249 Ω/□ and a low-temperature (77 K) electron mobility as high as 7830 cm²/V·s. These results indicate that high-performance HEMT structures can be achieved on sapphire substrates through improved growth techniques.

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